Zobrazeno 1 - 10
of 236
pro vyhledávání: '"I.P. Studenyak"'
Autor:
I.P. Studenyak, A.I. Pogodin, I.A. Shender, S.M. Bereznyuk, M.J. Filep, O.P. Kokhan, P. Kopcansky
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 3, Pp 260-266 (2020)
Copper-enriched (Cu0.75Ag0.25)7SiS5I-based ceramics were prepared from the micro- and nanopowders by pressing and sintering under developed technological conditions. Structural studies at different process step stages of ceramic samples preparation w
Externí odkaz:
https://doaj.org/article/37d71cd50f0b4d91baeeb6ad51c6582c
Autor:
I.P. Studenyak, S.M. Bereznyuk, M.M. Pop, V.I. Studenyak, A.I. Pogodin, O.P. Kokhan, B. Grančič, P. Kúš
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 2, Pp 186-192 (2020)
(Cu1–хAgx)7SiS5I mixed crystals were grown using the vertical zone crystalliza-tion method, they have been shown to crystallize in cubic structure (). The diffuse reflection spectra for the powders of (Cu1–хAgx)7SiS5I mixed crystals were measur
Externí odkaz:
https://doaj.org/article/2631aa7972ad4aa6bbe3e7209a45c568
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 23, Iss 1, Pp 37-40 (2020)
Microhardness of (Cu1–xAgx)7GeSe5I mixed crystals and composites on their base was investigated using the Vickers indenter at room temperature. (Cu1–xAgx)7GeSe5I mixed crystals were obtained using the Bridgman–Stockbarger method. Composites on
Externí odkaz:
https://doaj.org/article/0217faba19734fcf956537bb3f69cb43
Autor:
I.P. Studenyak
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 22, Iss 4, Pp 387-390 (2019)
Dielectric properties of composites based on planar-oriented 6СВ liquid crystal with Cu6PS5X (X = I, Br) nanoparticles at 293 K in the frequency range from 6 to 106 Hz have been studied. The concentration of nanoparticles varied from 0 up to 0.1 wt
Externí odkaz:
https://doaj.org/article/1fdcad62a9ea4378b2416495c5fc6bbc
Autor:
I.P. Studenyak
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 22, Iss 3, Pp 347-352 (2019)
(Cu6PS5I)1–x(Cu7PS6)x and (Cu6PS5Br)1–x(Cu7PS6)x mixed crystals were grown using a direct crystallization technique from the melt. Refractive indices and extinction coefficients for mixed crystals were obtained from the spectral ellipsometry meas
Externí odkaz:
https://doaj.org/article/74bdb72ac4f048c4ad4e701e1aa08b2c
Autor:
I.P. Studenyak
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 19, Iss 2, Pp 192-196 (2019)
Cu7GeS5I thin films were obtained by non-reactive radio frequency magnetron sputtering onto silicate glass substrates. Optical transmission spectra of as-deposited and annealed Cu7GeS5I thin films were measured in the temperature interval 77–300 K.
Externí odkaz:
https://doaj.org/article/3c454bd03026429eadb34ef133050c95
Autor:
I.P. Studenyak
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 22, Iss 1, Pp 26-33 (2019)
Potassium halogenthiophosphates K6PS5Br and K6PS5Cl as well as halogen-free K7PS6 compound were synthesized using the two-step technique from elemental substances as well as potassium halides. The elemental composition of the obtained samples was det
Externí odkaz:
https://doaj.org/article/e8e2262c5d0b459aa3645c7b15d0089d
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 4, Pp 407-411 (2018)
The influence of Сu 7 GeS 5 I nanoparticles on the dielectric properties of planar- oriented liquid crystal 6CB has been investigated within the frequency range 6...10 6 Hz at the temperature 293 K. The concentration of nanoparticles varied within t
Externí odkaz:
https://doaj.org/article/d4446508c2c3433b9fa390b68bbece4d
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 3, Pp 273-276 (2018)
(Cu1–xAgx)7GeS5I mixed crystals were grown using the Bridgman–Stockbarger method. The hardness dependences on the indentation depth profiles in (Cu 1–x Ag x ) 7 GeS 5 I mixed crystals were investigated. The measurements of mechanical parameters
Externí odkaz:
https://doaj.org/article/479cc5edc5c14f93952680d9efdf4ca2
Publikováno v:
Semiconductor Physics, Quantum Electronics & Optoelectronics, Vol 21, Iss 2, Pp 167-172 (2018)
Cu–As–S thin films were deposited using the thermal evaporation technique. Optical transmission spectra of Cu 0.1 As 2.1 S 3.1 thin films were measured within the temperature range 77...300 K. Temperature behaviour of absorption edge inherent to
Externí odkaz:
https://doaj.org/article/06d6768cfd9b4d639df697bf18a6a5d9