Zobrazeno 1 - 10
of 59
pro vyhledávání: '"I.M. Safonov"'
Publikováno v:
Superlattices and Microstructures. 45:489-495
In this paper, we compare transmission spectra of electrons propagated in ballistic transport regime in finite conventional and finite effective-mass superlattices. Taking into account the off-center-zone transport as well as center-zone one, we show
Publikováno v:
Optical and Quantum Electronics. 40:1219-1225
In this work, the simulation of the 980 nm InGaAs intra-cavity-contacted oxide-confined vertical-cavity surface-emitting lasers (ICOC VCSELs) with separated triplets of quantum wells (STQW) is presented. We analyze the thermal, electrical and optical
Publikováno v:
physica status solidi (b). 245:1598-1603
In this paper, we consider the ballistic transport of electrons propagating in the semiconductor superlattice with some angle relative to normal line for interfaces. Such propagation of electrons is characterized by a wave vector which can be decompo
Publikováno v:
Superlattices and Microstructures. 43:120-131
Knowledge of the energy band diagram is very important in semiconductor physics due to the fact that the band diagram influences almost all parts of the physics of a semiconductor device. In this paper we examine a piecewise-constant approximation of
Publikováno v:
Optical and Quantum Electronics. 40:197-204
In this paper, we have developed new design of the injector for quantum cascade structures based on the effective mass superlattice. The transmission spectra of the conventional injector and effective-mass injector have been compared. Advantage of th
Publikováno v:
Telecommunications and Radio Engineering. 65:1217-1226
Publikováno v:
Microelectronics Journal. 36:350-355
Carrier capture in quantum well structures defines high-speed properties of the lasers and amplifiers based on them. We introduce general definition of the capture area in low-dimensional heterostructures based on intersubband coupling coefficient. S
Publikováno v:
IEEE Photonics Technology Letters. 18:1362-1364
A numerical model for calculation of the ultrafast gain properties of asymmetrical multiple-quantum-well (AMQW) semiconductor optical amplifiers is extended with more exact calculation of tunneling times for each barrier and different directions of t
Autor:
Arturo García Pérez, I.M. Safonov, José Amparo Andrade Lucio, Mykhailo Klymenko, Oleksiy V. Shulika, Igor A. Sukhoivanov, Roberto Rojas-Laguna
Publikováno v:
2010 10th International Conference on Laser and Fiber-Optical Networks Modeling.
Asymmetric multiple quantum well active regions for optically-pumped semiconductor disk lasers (OPS-DLs) are designed employing wave function engineering within GaAs/AlGaAs material system, which provide simultaneously good electronic confinement, la
Publikováno v:
2008 International Workshop "THz Radiation: Basic Research and Applications".
To predict output optical characteristics of quantum-cascade lasers, it is necessary to model dynamics of electrons, holes and photons including into consideration non-equilibrium regime. There are several approaches to modeling of the dynamics of th