Zobrazeno 1 - 10
of 151
pro vyhledávání: '"I.J. Bahl"'
Publikováno v:
IEEE Microwave Magazine. 10:114-118
A high TOI C-band MMIC amplifier has been developed using Cobham's multifunction self-aligned gate MESFET technology. The medium-power amplifier demonstrated 48-dBm OTOI, greater than 0.6 W saturated power, and 45% PAE performance. This outstanding T
Autor:
I.J. Bahl
Publikováno v:
IEEE Microwave Magazine. 9:96-104
Multilayer and multiconductor technologies such as Si- and gallium arsenide (GaAs)- based MMICs and LTCCs have resulted in compact components. In such technologies, lumped elements can be realized easily and have become attractive in reducing the siz
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 56:293-299
This paper presents the design approach and test results of L- and S-band compact monolithic microwave integrated circuit (MMIC) phase shifters (PSs) developed for octave band applications. The PS designs were based on an optimum topology selected fo
Autor:
I.J. Bahl
Publikováno v:
IEEE Microwave Magazine. 8:82-86
A diode-based method is the simplest way for power detection. Detectors make use of the nonlinear characteristics of devices to generate an output signal containing many frequency components. By proper filtering, the dc component is separated and is
Autor:
I.J. Bahl
Publikováno v:
IEEE Microwave Magazine. 7:56-62
Most microwave circuits and antennas use impedance transformers. In a conventional power amplifier, large number of inductors and capacitor or transmission line sections are use to realize an impedance transformer. This article presents an asymmetric
Autor:
I.J. Bahl
Publikováno v:
IEEE Microwave Magazine. 5:66-71
This paper describes a design methodology used for the development of multistage broadband power amplifiers. The method uses the measured small-signal S-parameters and loadpull data in association with low loss matching (LLM) design technique. The Q-
Publikováno v:
IEEE Microwave Magazine. 5:83-86
GaAs monolithic microwave integrated circuits (MMICs) are widely used in commercial and military microwave systems. Due to the fine geometry used in MMIC transistors, these circuits are susceptible to damage from high-power spurious electromagnetic (
Autor:
I.J. Bahl
Publikováno v:
IEEE Microwave Magazine. 2:73-80
The coupling effects between various lumped elements have shown that the effect on inductors is less than 1% for inductors having reactance of about 50 /spl Omega/ and separated by 20 /spl mu/m on a 75 /spl mu/m thick GaAs substrate. Thus, a distance
Autor:
I.J. Bahl
Publikováno v:
IEEE Microwave Magazine. 1:64-73
Experimental and theoretical results for microstrip line characteristics are included for several polyimide thicknesses and microstrip conductor widths. A closed-form expression for the equivalent dielectric constant of a multilayer dielectric struct
Autor:
I.J. Bahl
Publikováno v:
IEEE Microwave and Wireless Components Letters. 18:52-54
Design approach and test data for a two-octave bandwidth HPA developed using GaAs based multifunction self aligned gate metal semiconductor field effect transistor with multilevel plating monolithic microwave integrated circuit (MMIC) technology are