Výsledky vyhledávání - "I.I. Khlebnikov"

Defect Status in SiC Manufacturing

Autor: Adrian Powell, Calvin H. Carter, Joseph John Sumakeris, Cengiz Balkas, Cem Basceri, H. McD. Hobgood, R.T. Leonard, D.P. Malta, I.I. Khlebnikov, Yuri I. Khlebnikov, Michael James Paisley, Elif Berkman, Albert A. Burk, M.F. Brady, Vijay Balakrishna, Eugene Deyneka, Valeri F. Tsvetkov, Michael J. O'Loughlin

Publikováno v: Materials Science Forum. :3-6

Availability of high-quality, large diameter SiC wafers in quantity has bolstered the commercial application of and interest in both SiC- and nitride-based device technologies. Successful development of SiC devices requires low defect densities, whic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3720050cb306432f06eaa21c2e31416b
https://doi.org/10.4028/www.scientific.net/msf.615-617.3

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100 mm 4HN-SiC Wafers with Zero Micropipe Density

Autor: Adrian Powell, Robert Tyler Leonard, Jason Ronald Jenny, Calvin H. Carter, Michael James Paisley, M.F. Brady, R. Zilli, Yuri I. Khlebnikov, Vijay Balakrishna, Eugene Deyneka, I.I. Khlebnikov, H. McD. Hobgood, Valeri F. Tsvetkov, D.P. Malta, Cem Basceri

Publikováno v: Materials Science Forum. :7-10

Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers. Combined techniques of KOH etching and cross-polarizer inspections wer

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1dbd8f36b6ea0c79e01838ced136b81b
https://doi.org/10.4028/www.scientific.net/msf.600-603.7

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Growth of Micropipe-Free Single Crystal Silicon Carbide (SiC) Ingots Via Physical Vapor Transport (PVT)

Autor: Cem Basceri, Cengiz M. Balkas, G. Stratiy, I.I. Khlebnikov, Peter G. Muzykov, Mrityunjay Sharma, Yuri I. Khlebnikov, Murat N. Silan

Publikováno v: Materials Science Forum. :39-42

The move towards commercialization of SiC based devices places increasing demands on the quality of the substrate material. While the industry has steadily decreased the micropipe (MP) levels in commercial SiC substrates over the past years, the achi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac6da78b5274a2da8dec20ed1ebeea02
https://doi.org/10.4028/www.scientific.net/msf.527-529.39

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A Method for Defect Delineation in Silicon Carbide Using Potassium Hydroxide Vapor

Autor: I.I. Khlebnikov, Tsanko Lashkov, Georgiy Stratiy, Eugene Y. Tupitsyn, Robert T. Bondokov, Tangali S. Sudarshan, Yuri I. Khlebnikov

Publikováno v: Japanese Journal of Applied Physics. 41:7312-7316

Defect evaluation of silicon carbide (SiC) wafers can be accomplished by potassium hydroxide (KOH) etching. The method described in this work employs etching by KOH in a vapor phase rather than in a liquid phase and this method allows reliable etchin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::031266f06246fa0785ba6c9cbcd0c53a
https://doi.org/10.1143/jjap.41.7312

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Local epitaxy and lateral epitaxial overgrowth of SiC

Autor: Tangali S. Sudarshan, Yuri I. Khlebnikov, I.I. Khlebnikov, Mathew Parker

Publikováno v: Journal of Crystal Growth. 233:112-120

Selective epitaxial growth and lateral overgrowth of SiC using a graphite mask is reported in this paper. Selective area SiC growth is accomplished using physical vapor transport (PVT) epitaxy. The growth was carried out on 4 H and 6H-SiC wafers on-

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a29c5250657f0cdd4bf108468c807a46
https://doi.org/10.1016/s0022-0248(01)01558-5

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