Zobrazeno 1 - 10
of 55
pro vyhledávání: '"I.I. Ivanchik"'
Autor:
N. Romčević, D. Stojanović, I.I. Ivanchik, Jelena Trajic, Dmitry Khokhlov, Maja Romcevic, B. Hadžić
Publikováno v:
Acta Physica Polonica A. 112:959-962
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::438bfa25df026fd202bace3c67df3174
https://doi.org/10.12693/aphyspola.112.959
https://doi.org/10.12693/aphyspola.112.959
Autor:
Dmitriy R. Khokhlov, Witold Dobrowolski, V. E. Slyn’ko, A. V. Morozov, E.I. Slynko, Alexander Kozhanov, I.I. Ivanchik, Tomasz Story
Publikováno v:
International Journal of Modern Physics B. 16:3343-3346
We have observed the negative magnetoresistance effect in the narrow-gap PbTe(Mn,Cr) semiconductor, in which the Fermi level is pinned within the gap nearby the conduction band edge. Previously the giant negative magentoresistance effect has been rep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e89dbd7a2c082d78880c02d65ba6cf5
https://doi.org/10.1142/s0217979202014371
https://doi.org/10.1142/s0217979202014371
Publikováno v:
Journal of Physics: Condensed Matter
We present Raman spectra and results of galvanomagnetic measurements of PbTe single crystals, doped with gallium, between 10 and 300 K. The effect of persistent photoconductivity depends on the gallium concentration. In all samples well-resolved peak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::95ebc5d4b5bdbb799f430dc084c44136
https://doi.org/10.1088/0953-8984/12/40/315
https://doi.org/10.1088/0953-8984/12/40/315
Autor:
Dmitry Khokhlov, Nebojša Romčević, W. König, A. I. Belogorokhov, I.I. Ivanchik, Maja Romcevic
Publikováno v:
Infrared Physics and Technology
We present far-infrared reflection spectra and results of galvanomagnetic measurements of PbTe single crystals doped with gallium between 10 and 300 K. The analysis of the far-infrared reflection spectra was made by a fitting procedure based on the m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::22a854b3a3c1ae174c95e0ac18ba944d
https://doi.org/10.1016/s1350-4495(99)00035-3
https://doi.org/10.1016/s1350-4495(99)00035-3
Publikováno v:
Semiconductors. 32:608-612
This paper presents a study of the structure of the IR reflectance spectra in the sub-gap region of lead telluride doped with indium and gallium and the Raman spectra in PbTe(In). In the Raman and reflectance spectra of PbTe(In), features are observe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94537878228803589517cc9438518c99
https://doi.org/10.1134/1.1187551
https://doi.org/10.1134/1.1187551
Publikováno v:
Zeitschrift für Physik B Condensed Matter. 104:475-479
Raman scattering and far-infrared reflection spectra of 0.5 at.% In doped Pb0.9Mn0.1Te single crystal at temperatures between 10 and 300K are presented. The infrared spectra have been fitted using a modified plasmon-phonon interaction model with an a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0007e86c1f2d523c47a2c50954190868
https://doi.org/10.1007/s002570050478
https://doi.org/10.1007/s002570050478
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 63:353-357
Selective photoconductivity at frequency ω=155 cm− was discovered in PbTe(Ga) narrow-gap semiconductors at liquid-nitrogen temperatures. The corresponding energy is much lower than all characteristic energies of the electronic spectrum of the semi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60ed886bdabf51961d211967e3d429ef
https://doi.org/10.1134/1.567022
https://doi.org/10.1134/1.567022
Autor:
Alexander Kozhanov, I.I. Ivanchik, D. E. Dolzhenko, Dmitry Khokhlov, K. G. Kristovskii, Dan M. Watson
Publikováno v:
Physics of the Solid State. 46:122-124
Persistent photoconductivity in a Pb0.75Sn0.25Te(In) alloy initiated by monochromatic submillimeter-range radiation at wavelengths of 176 and 241 µm was observed at helium temperatures. This photoconductivity is shown to be associated with optical e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34e560c4ad050952414c125bec93e4a7
https://doi.org/10.1134/1.1641937
https://doi.org/10.1134/1.1641937
Autor:
V. N. Glonty, Boris A. Akimov, Ludmila I. Ryabova, I.I. Ivanchik, Alexander Gaskov, F. N. Putilin
Publikováno v:
Physica Status Solidi (a). 142:85-89
PbTe(Ga) films are obtained by the laser deposition technique from the two-phase alloy PbTe + GaTe. The GaTe content in the target is varied from 0.5 to 5 mol%. Electron diffraction, LIMS, SNMS, and Auger microanalysis are used for the investigation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::006ed6069e96e020a8bc2367cf5f3bfe
https://doi.org/10.1002/pssa.2211420110
https://doi.org/10.1002/pssa.2211420110
Publikováno v:
Infrared Physics & Technology. 35:23-31
A new class of far-infrared photodetectors based on lead-tin tellurides doped with group III impurities is presented. The persistent photoconductivity effect appearing in these materials provides an internal signal integration resulting in a consider
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66da37ba19951de349a0d2823bd5f8bb
https://doi.org/10.1016/1350-4495(94)90038-8
https://doi.org/10.1016/1350-4495(94)90038-8