Zobrazeno 1 - 10
of 46
pro vyhledávání: '"I.H. Chiang"'
Publikováno v:
Electronics Letters. 50:1427-1429
The bit cell is a key component that determines the VDD min and power consumption of a sub-threshold static random access memory (SRAM). A new bit cell with a pnn -type latch structure is proposed. The analysis and measurement results indicate that t
Autor:
Nazarychev, Victor M.1 (AUTHOR) nazarychev@imc.macro.ru
Publikováno v:
Polymers (20734360). Dec2024, Vol. 16 Issue 23, p3231. 17p.
Autor:
A. Carroll, G. Bunce, K. Woodle, D.M. Lazarus, E. Lessard, W. Sims, H.N. Brown, D. Beavis, A. Pendzick, J.W. Glenn, I.H. Chiang
The proton intensity delivered to the AGS experimental areas is expected to increase fourfold when the full potential of the Booster is realized. It is therefore necessary to anticipate the modifications to the shielding and radiation monitoring that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e793a35f4354a618bcb5c8377ffb1fb
https://doi.org/10.2172/5955247
https://doi.org/10.2172/5955247
Autor:
Yeob, Jongin1,2 (AUTHOR) swhong@kitech.re.kr, Hong, Sung Woo2 (AUTHOR), Koh, Won-Gun1 (AUTHOR) wongun@yonsei.ac.kr, Park, In2,3 (AUTHOR) wongun@yonsei.ac.kr
Publikováno v:
Polymers (20734360). Jan2024, Vol. 16 Issue 2, p297. 17p.
Autor:
Guo, Chaopeng1 (AUTHOR) guochaopeng@swc.neu.edu.cn, Xu, Ming1 (AUTHOR), Hu, Shengqiang1 (AUTHOR), Song, Jie1 (AUTHOR) songjie@mail.neu.edu.cn
Publikováno v:
Mathematics (2227-7390). Jun2023, Vol. 11 Issue 12, p2638. 31p.
Autor:
Singh, Buta, Han, Jinchen, Meziani, Mohammed J., Cao, Li, Yerra, Subhadra, Collins, Jordan, Dumra, Simran, Sun, Ya-Ping
Publikováno v:
Nanomaterials (2079-4991); Aug2024, Vol. 14 Issue 15, p1259, 25p
Autor:
Platt, Moritz1 (AUTHOR) moritz.platt@kcl.ac.uk, McBurney, Peter1 (AUTHOR)
Publikováno v:
Algorithms. Jan2023, Vol. 16 Issue 1, p34. 122p.
Publikováno v:
Scopus-Elsevier
Degradation of Secondary Emission Chamber (SEC) efficiencies has been seen in the past. As a result, instruments in use today are built to minimize any such effects. With beam intensities as high as 6/spl times/10/sup 13/ protons per pulse incident o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fed0cc767b382fa8a4c235dbcc0d22e7
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032278416&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0032278416&partnerID=MN8TOARS
Akademický článek
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Publikováno v:
Nanomaterials (2079-4991); Feb2024, Vol. 14 Issue 4, p331, 36p