Zobrazeno 1 - 10
of 120
pro vyhledávání: '"I.G. Neizvestny"'
Autor:
I.O. Akhundov, V.Sh. Aliev, V.L. Alperovich, A.P. Anciferov, A.L. Aseev, A.K. Bakarov, I.I. Beterov, M.V. Budantsev, A.A. Bykov, A.V. Chaplik, A. Chin, I.A. Derebezov, D.V. Dmitriev, S.A. Dvoretsky, A.V. Dvurechenskii, M.V. Entin, V.M. Entin, L.I. Fedina, T.A. Gavrilova, K.V. Grachev, V.A. Gritsenko, A.K. Gutakovskii, A.V. Haisler, V.A. Haisler, D.G. Ikusov, D.R. Islamov, E.V. Ivanova, M.M. Kachanova, V.V. Kaichev, A.K. Kalagin, A.N. Karpov, D.M. Kazantsev, S.S. Kosolobov, A.S. Kozhukhov, D.A. Kozlov, V.D. Kuzmin, Z.D. Kvon, A.V. Latyshev, A.S. Mardezov, A.S. Medvedev, N.N. Mikhailov, A.G. Milekhin, D.A. Nasimov, I.G. Neizvestny, L.A. Nenasheva, E.B. Olshanetsky, T.V. Perevalov, A.G. Pogosov, D.A. Pokhabov, V.P. Popov, V.Ya. Prinz, V.G. Remesnik, S.V. Rihlicky, E.E. Rodyakina, D.I. Rogilo, K.N. Romanyuk, N.S. Rudaya, I.I. Ryabtsev, I.V. Sabinina, V.K. Sandyrev, A.A. Saraev, O.I. Semenova, D.V. Sheglov, A.A. Shevyrin, A.A. Shklyaev, V.A. Shvets, N.L. Shwartz, G.Yu. Sidorov, Yu.G. Sidorov, S.V. Sitnikov, E.V. Spesivcev, A.S. Terekhov, S.A. Teys, O.A. Tkachenko, V.A. Tkachenko, A.I. Toropov, D.B. Tretyakov, A.V. Tsarev, I.E. Tyschenko, I.N. Uzhakov, V.S. Varavin, S.A. Vitkalov, A.I. Yakimov, M.V. Yakushev, A.S. Yaroshevich, D.R.T. Zahn, M.V. Zamoryanskaya, E.Yu. Zhdanov, Yu.A. Zhivodkov
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0da5de83dc57a11bf54bce44596bd0a4
https://doi.org/10.1016/b978-0-12-810512-2.00028-7
https://doi.org/10.1016/b978-0-12-810512-2.00028-7
Publikováno v:
Физика и техника полупроводников. 52:520
AbstractThe nanostructures formation process using the droplet epitaxy technique was investigated by Monte Carlo simulation. The simulation was fulfilled for two-dimensional and three-dimensional geometry substrates. The nanostructures morphology dep
Publikováno v:
Scopus-Elsevier
The desynchronization mode of 2D-islands creation on the vicinal crystal surface during MBE growth was investigated by Monte Carlo simulation. The behavior of perimeter oscillations of islands on flat and stepped (100) surfaces of a simple cubic crys
Autor:
I.G. Neizvestny
Publikováno v:
2007 8th Siberian Russian Workshop and Tutorial on Electron Devices and Materials.
This paper deals with the technologies in Institute of Semiconductor Physics SB RAS which are the preparation of initial nanometer size thickness structures (substrates ) by molecular beam epitaxy method (MBE) and silicon on insulator (SOI) method, t
Autor:
I.G. Neizvestny
Publikováno v:
International Workshops and Tutorials on Electron Devices and Materials.
4n this tutorial the main trends in development of silicon nanoelectronics are presented and analyzed. All presented technologies are illustrated.
Autor:
I.G. Neizvestny
Publikováno v:
Proceedings. 6th Annual. 2005 International Siberian Workshop and Tutorials on Electron Devices and Materials, 2005..
Usual circuit of forming the image of object is based on transformation of radiation with various intensity into the electrical signal with the aid of matrix photodetector devices (MPD) which can be formed on the devices with charge connection (DCC)
Publikováno v:
2001 Siberian Russian Student Workshop on Electron Devices and Materials. Proceedings 2nd Annual (IEEE Cat. No.01EX469).
Influence of step energy barriers (Schwoebel barriers) and surface diffusion anisotropy on surface relief evolution during the growth process was investigated by Monte Carlo simulation. Increase of RHEED oscillation period with temperature on the vic
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Akademický článek
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