Zobrazeno 1 - 10
of 52
pro vyhledávání: '"I.D. Desnica-Frankovic"'
Autor:
Pavo Dubček, Ivančica Bogdanović-Radović, Nikola Radić, Maja Buljan, I.D. Desnica-Frankovic, Uroš V. Desnica, Zdravko Siketić, Mile Ivanda, Krešimir Salamon, Sigrid Bernstorff
Publikováno v:
Superlattices and Microstructures. 44:323-330
Germanium Quantum Dots (Ge QDs) were formed in SiO2 by RT magnetron sputtering co-deposition of Ge and SiO2 and subsequent annealing. Films were deposited in the form of alternating (Ge+SiO2) layers (40:60 molar ratio) and pure SiO2 layers, serving a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1538c6cc1dce2d3afae463545e9c1958
https://doi.org/10.1016/j.spmi.2008.01.021
https://doi.org/10.1016/j.spmi.2008.01.021
Autor:
P. Dubček, U. V. Desnica, Mark C Ridgway, Christopher Glover, Sigrid Bernstorff, I.D. Desnica-Frankovic
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:114-117
Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74 Ge, from 3 × 10 12 cm −2 to 3 × 10 16 cm −2 ; at room- or liqui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d4032c14af2ff623ccf7c2386a4a7b0
https://doi.org/10.1016/j.nimb.2006.03.093
https://doi.org/10.1016/j.nimb.2006.03.093
Autor:
I.D. Desnica-Frankovic
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 216:318-323
Raman spectroscopy was used to analyze disorder evolution, crystalline to amorphous phase transformations as well as modifications of amorphous phase beyond the amorphous threshold in representative compound and elemental tetrahedral semiconductors w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::252835ec270b4b8ad1e231cdde996d69
https://doi.org/10.1016/j.nimb.2003.11.054
https://doi.org/10.1016/j.nimb.2003.11.054
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 200:138-141
Grazing incidence small angle X-ray scattering (GISAXS) was applied to study size and shape as well as distribution of CdS nanocrystals formed in monocrystalline silicon substrate by separate implantation of constituent elements with a dose of 4.5×1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f8b21b54ef3db0efaffbddea239f8498
https://doi.org/10.1016/s0168-583x(02)01709-3
https://doi.org/10.1016/s0168-583x(02)01709-3
Autor:
Sigrid Bernstorff, Maja Buljan, C. W. White, I.D. Desnica-Frankovic, Ognjen Milat, Krešimir Salamon, Pavo Dubček, Uroš V. Desnica
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 200:191-195
Grazing incidence small angle X-ray scattering (GISAXS) was applied to study the synthesis and size evolution of CdS nanocrystals. CdS was formed in SiO2 substrate by successive multi-energy implantation of constituent elements (three different ion d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc8cece09808683503a298e9e816f256
https://doi.org/10.1016/s0168-583x(02)01718-4
https://doi.org/10.1016/s0168-583x(02)01718-4
Publikováno v:
Vacuum. 67:451-455
The reflectivity (R) in the UV–visible range was used to study CdS nanocrystals obtained by implantation of Cd and S ions into SiO2 and subsequent annealing (Ta=300–900°C). We demonstrate that such an analysis can give very useful information ab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c7077a7479f7202f5b31f7f6b7e658d2
https://doi.org/10.1016/s0042-207x(02)00230-0
https://doi.org/10.1016/s0042-207x(02)00230-0
Publikováno v:
Journal of Non-Crystalline Solids. :1100-1104
We present a systematic study of the influence of ion dose and post-implantation annealing on the synthesis and growth of CdS nanocrystals in a SiO{sub 2} matrix. Nanocrystals were obtained after implantation of monoenergetic Cd and S ions and subseq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4d786536e906849a92d0f057ce0f82a3
https://doi.org/10.1016/s0022-3093(02)00941-9
https://doi.org/10.1016/s0022-3093(02)00941-9
Publikováno v:
Physica B: Condensed Matter. :887-890
The goal of this study was to identify microscopic causes of the extensive changes in electrical properties observed in CdS crystal when doped with some fast-diffusers (FD), Cu, Ag or Au. The compensation of donors and the dynamics of in-diffusion wa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0516e11b92b73b4951f362d4a0637b84
https://doi.org/10.1016/s0921-4526(99)00546-3
https://doi.org/10.1016/s0921-4526(99)00546-3
Publikováno v:
Physica B: Condensed Matter. :907-910
Electrical deactivation of donors in CdS was studied by using Perturbed γγ Angular correlation (PAC) spectroscopy and temperature dependence of Hall mobility, resistivity, and free-carrier concentration. PAC spectra and electrical properties were m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0560889daae5fad798b554745148327b
https://doi.org/10.1016/s0921-4526(99)00551-7
https://doi.org/10.1016/s0921-4526(99)00551-7
Publikováno v:
Journal of Crystal Growth. 197:612-615
Microscopic origin of full electrical compensation of donor doped CdS was analyzed with perturbed angular correlation and Hall-effect measurements. Single crystals were implanted with radioactive 111 In and stable 115 In ions. Total In concentration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4662a938e924772b926268c40a08e920
https://doi.org/10.1016/s0022-0248(98)00809-4
https://doi.org/10.1016/s0022-0248(98)00809-4