Zobrazeno 1 - 10
of 27
pro vyhledávání: '"I.C. Bassignana"'
Autor:
D.A. Macquistan, C.J. Miner, Glen Hillier, A. Majeed, D. Beckett, I.C. Bassignana, R. W. Streater
Publikováno v:
Journal of Crystal Growth. 178:445-458
Variations in the lattice parameter and crystal quality of commercially available GaAs (n-type, Si: 1−7 × 1018 cm−3 substrates have been studied by high-resolution X-ray diffraction (HRXRD) and asymmetric crystal topography (ACT). Crystals grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8163f25719cd81a99331f5b2105ff72d
https://doi.org/10.1016/s0022-0248(97)00009-2
https://doi.org/10.1016/s0022-0248(97)00009-2
Publikováno v:
Journal of Crystal Growth. 172:25-36
A review of the existing literature shows that the accuracy with which the Al composition of a coherent Al x Ga 1−x As GaAs heteroepitaxial layer can be determined from the lattice parameter difference between it and the substrate has been a topic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a83cbf9c7b1c693f287a4a21c902bde1
https://doi.org/10.1016/s0022-0248(96)00733-6
https://doi.org/10.1016/s0022-0248(96)00733-6
Publikováno v:
Advances in X-ray Analysis. 36:221-229
Double Crystal X-Ray Diffraction (DCD) is often used to determine the Al content of AlxGa1-xAs/GaAs epitaxial layers. Assessing composition from a measurement of mismatch is problematic because it invokes a number of assumptions. This study bypasses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67454310ca49a66eeaadac735371f30c
https://doi.org/10.1154/s0376030800018826
https://doi.org/10.1154/s0376030800018826
Autor:
D.A. Macquistan, I.C. Bassignana
Publikováno v:
Proceedings of the 7th Conference on Semi-insulating III-V Materials.
Asymmetric crystal x-ray topography (ACT) which can image entire 3" wafers on radiography film using a Cu x-ray source in less than 30 min. is a fast, convenient tool for routine wafer prescreening. An ACT study of over 70 SI LEC GaAs wafers revealed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f977e4f2d18f86e982601f6cd4978b2b
https://doi.org/10.1109/sim.1992.752697
https://doi.org/10.1109/sim.1992.752697
Publikováno v:
Proceedings of the 7th Conference on Semi-insulating III-V Materials.
Micron scale birefringence mapping of 1 cm/sup 2/ portions of 3" semi-insulating GaAs wafers shows fluctuations over characteristic dimensions between 50 and 500 /spl mu/m, with magnitudes as large as 1/5 wavelength. The results are compared to those
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f9a89ff531349a0b815302a2228bf3a
https://doi.org/10.1109/sim.1992.752701
https://doi.org/10.1109/sim.1992.752701
Autor:
I.C. Bassignana, D.A. Macquistan
Asymmetric crystal x-ray topography (ACT) is a convenient, non-destructive test of crystal perfection which can be used for routine screening of substrate wafers and epitaxial layers. Entire 3” wafers can be imaged in approximately 30 min. The abil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf7a296bc2fceac71cbc3bceba36c7f
https://doi.org/10.1016/b978-0-444-81889-8.50022-5
https://doi.org/10.1016/b978-0-444-81889-8.50022-5
Autor:
D.A. Macquistan, I.C. Bassignana
Publikováno v:
Acta Crystallographica Section A Foundations of Crystallography. 49:c421-c421
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c77c4f2ee56867be874e10bacdf8c159
https://doi.org/10.1107/s010876737808808x
https://doi.org/10.1107/s010876737808808x
Publikováno v:
Surface Science. 155:387-399
The interaction of N 2 with an Fe(111) surface was investigated by high resolution electron energy loss spectroscopy. The molecular α 1 -N 2 state on the clean surface is identified as the immediate precursor for dissociation, and is characterized b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1625ce79f9a453078c3186dfb6f983ea
https://doi.org/10.1016/0039-6028(85)90005-6
https://doi.org/10.1016/0039-6028(85)90005-6
Autor:
H. Reiss, I.C. Bassignana
Publikováno v:
Journal of Membrane Science. 15:27-41
This paper treats ion transport and water dissociation in “bipolar membranes”, consisting of juxtaposed cation and anion exchangers. Bipolar membranes are the close ion analogues of the semiconductor p—n junction and show similar, but not ident
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c26301ed79b8b8049a5437a06b2d84a
https://doi.org/10.1016/s0376-7388(00)81360-5
https://doi.org/10.1016/s0376-7388(00)81360-5
Publikováno v:
Molecular Physics. 58:799-813
The structure of a crystalline monolayer of C2N2 adsorbed on graphite (0001) has been determined by neutron diffraction between 30 and 180 K. The space group is Pgg and the lattice constants at 95 K are a 1 = 7·22 A and a 2 = 6·72 A. The two molecu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a331bbd8c9b519df5a4de56cf1fb504
https://doi.org/10.1080/00268978600101581
https://doi.org/10.1080/00268978600101581