Zobrazeno 1 - 10
of 68
pro vyhledávání: '"I.B. Mamontova"'
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:148-153
In this work, two methods for fabrication of composite conductive films, consisting of single walled carbon nanotubes (SWCNTs) and PEDOT:PSS, in order to obtain films with high conductivity and transparency for their use in solar cell structures base
Publikováno v:
Molecular Crystals and Liquid Crystals. 717:92-97
Multiple repeated procedure of spin-coating, thermal annealing and midcycle washing of the non-conductive PSS component was developed to fabricate the multilayer PEDOT:PSS films. A 4–5 times enhanc...
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Autor:
I.B. Mamontova, V.R. Romanyuk, Alexander V. Korovin, O. Yu. Borkovskaya, A. V. Sukach, N. L. Dmitruk
Publikováno v:
Solar Energy Materials and Solar Cells. 137:124-130
The investigation is aimed at elaboration of technology for submicron p + - GaAs layer formation on micro/nanotextured n -GaAs substrates by using low-temperature (550 °C) diffusion of zinc to take the advantage of optical and recombination properti
Autor:
Denys Naumenko, N.L. Dmitruk, Igor Dmitruk, Elena V. Basiuk, Victor Meza-Laguna, I.B. Mamontova, N. I. Berezovska, O. Yu. Borkovskaya
Publikováno v:
Molecular Crystals and Liquid Crystals. 535:10-17
We present the results of comparative investigations of the effect of a direct solvent-free modification of C60 thin films with photosensitive molecules: aminosubstituted polycyclic aromatic hydrocarbons (1-aminopyrene, 1-pyrenemethylamine hydrochlor
Autor:
A. A. Akopyan, Kh. N. Bachronov, R. V. Konakova, O. Yu. Borkovskaya, I.B. Mamontova, N.L. Dmitruk, D. M. Yodgorova, A. V. Karimov
Publikováno v:
Semiconductors. 43:368-373
The p-n junctions promising for photoconverters have been fabricated using diffusion from the gaseous phase and studied with the analysis of mass transport of the doping impurity (Zn) through the microprofile GaAs surface taken into account. Dependin
Publikováno v:
physica status solidi c. 4:1523-1526
The technology of a submicron p+-GaAs layer formation on nano/microtextured n -GaAs substrate by a low-temperature (550 °C) diffusion of Zn is elaborated aimed at ensuring both improved optical and good electronic properties of a textured p-n juncti
Publikováno v:
Solar Energy Materials and Solar Cells. 90:2496-2500
Influence of the roughness (microrelief) of an active interface in p–n junction solar cells (SC) on the photovoltage (the open-circuit voltage Voc) has been studied. Nonuniformity of contact potential difference between p- and n-regions leads to ba
Publikováno v:
Solid State Phenomena. :97-102
This report is devoted to the investigation of self-organized microrelief morphology control and optimization of the microrelief processing leading to obtain hotosensitivity of solar cells (SC) enhancement. The use of the heterostructures (HS) with t
Publikováno v:
Solar Energy Materials and Solar Cells. 76:625-635
The influence of a microrelief interface between a thin conductive film (emitter) and a semiconductor substrate (absorber) on the optical and recombination losses in surface barrier solar cells is analyzed. Equations for the calculation of monochroma