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Publikováno v:
Acta Physica Polonica A. 80:811-817
The X-Ray Standing Wave Method (XRSW) was applied for the investigation of the silicon samples implanted with 80 keV Fe and Ni ions. The samples were measured by the XRSW method before and after annealing process. For theoretical calculations the two
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1344d23fa3661d2416aeeb2f08cfcee9
https://doi.org/10.12693/aphyspola.80.811
https://doi.org/10.12693/aphyspola.80.811
