Zobrazeno 1 - 10
of 66
pro vyhledávání: '"I.A. Obukhov"'
Autor:
I.A. Obukhov
Publikováno v:
Nano- i Mikrosistemnaya Tehnika. 23:24-31
A model that allows taking into account the influence of quantum and non-equilibrium effects to the characteristics of semiconductor devices is presented. The model was successfully used for calculation the characteristics of resonant-tun-neling diod
Autor:
M.P. Chernomorets, I.A. Obukhov, Mykhaylo Dubov, V.N. Sergienko, Alexander Turchin, G. V. Klishevich
Publikováno v:
Instruments and Experimental Techniques. 44:537-543
An astigmatic scheme of a laser wavelength meter based on a single air-gap Fizeau interferometer is described. For a multimode laser, the accuracy in determining the center of gravity of a spectrum is within 1GHz. Two complementary testing techniques
Autor:
I.I. Kvjatkevich, I.A. Obukhov
Publikováno v:
2008 18th International Crimean Conference - Microwave & Telecommunication Technology.
The conditions for existence of non-single solutions of charge transport equations in substrate of RTD are formulated.
Autor:
I.I. Kvjatkevich, I.A. Obukhov
Publikováno v:
2007 17th International Crimean Conference - Microwave & Telecommunication Technology.
Potential relief for electrons resonant tunneling is possible using two Schottky contacts with thin semiconductor film. Current-voltage characteristics calculated are N-shaped.
The maximal value of thermal conductivity \kappa_{max} of the perfect wurzite GaN crystal containing isotopes of natural abundance is estimated. Our upper limit of \kappa=4800 W/Km at T_{max}=32 K is smaller than calculated by Liu and Balandin \kappa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a5019898369ee5c4422c974b28e7aa6
http://arxiv.org/abs/0705.4187
http://arxiv.org/abs/0705.4187
Publikováno v:
Materials Research Express. 2:085902
Here we report the results of an experimental study of the thermal conductivity of GaN crystals doped by oxygen with concentrations of 4 × 1016, 2.6 × 1018 and 1.1 × 1020 cm−3, carried out in the temperature interval 7–318 K. We observed the h
Publikováno v:
2006 16th International Crimean Microwave and Telecommunication Technology.
It is shown that under some conditions electric characteristics of Quantum Wire (QW) are completely determined by physical properties and topology of contact areas. New transistor types on the basis of QW are offered. Device is named «Injection Quan
Autor:
A.A. Lavrenchuk, I.A. Obukhov
Publikováno v:
2005 15th International Crimean Conference Microwave & Telecommunication Technology.
In this article, it is demonstrated that the N-type current-voltage characteristics of quantum wires may be caused by gradients of electron temperature in device. It is also demonstrated that quantum wire may be used as micro-cooler
Autor:
I.A. Obukhov
Publikováno v:
2005 15th International Crimean Conference Microwave & Telecommunication Technology.
The basic problems that exist in the field of modeling the electric characteristics of quantum devices are declared. It is claimed that the traditional approaches do not provide for full and closed description of charge transport in mesoscopic struct
Publikováno v:
2004 14th International Crimean Conference "Microwave and Telecommunication Technology" (IEEE Cat. No.04EX843).
The electric characteristics of a device based on two crossed quantum wires are calculated. It was demonstrated that the different functionalities may be realized using such a device. The design of an energy converter based on quantum wires is offere