Zobrazeno 1 - 10
of 17
pro vyhledávání: '"I.A. Mokina"'
Autor:
E. G. Guk, A.V. Kamanin, Yu.A. Kudryavtsev, T. A. Yurre, V. B. Shuman, I.A. Mokina, N.M. Shmidt, L.A. Busygina
Publikováno v:
Computational Materials Science. 11:101-104
The initial diffusion stage (IDS) of B in Si and Zn in III–V compounds has been studied. The ultra-fast diffusion of Zn in InP has been found at low temperature. An evolution of non-equilibrium defect has been investigated during both IDS and isoth
Publikováno v:
Solid-State Electronics. 39:1441-1444
The initial stage of Zn diffusion into InP from polymer spin-on films has been investigated. A high concentration of microdefects and extended defects in the near-surface region (depth up to 1 μm), anomalously deep penetration of Zn atoms with a dif
Autor:
L.A. Busygina, N.M. Schmidt, I.A. Mokina, A. V. Merkulov, A. T. Gorelenok, Alex A. Kamanin, I. Yu. Yakimenko, T. A. Yurre, B. Ya. Ber
Publikováno v:
Materials Science Forum. :1415-1420
Publikováno v:
Proceedings of 8th International Conference on Indium Phosphide and Related Materials.
A Zn diffusion technique into III-V compounds from polymer spin-on films has been devised that allows to retain the initial surface morphology without any additional operations. This essentially simplifies the process. Moreover, the method provides a
Autor:
A. V. Kamanin, E.L. Obukhova, N.N. Faleev, N. M. Shmidt, I.A. Mokina, A. T. Gorelenok, A.V. Merkulov
Publikováno v:
Seventh International Conference on Indium Phosphide and Related Materials.
To follow the evolution of non-equilibrium intrinsic defects (NID), particular emphasis has been placed on the poorly studied initial diffusion stage (IDS) that corresponds to the time interval needed to increase the temperature from room temperature
Autor:
I.A. Mokina, A.M. Mintairov, A.V. Merkulov, N. M. Shmidt, A. V. Kamanin, T.A. Yurre, L.A. Busygina
Publikováno v:
1995 International Semiconductor Conference. CAS '95 Proceedings.
Zn diffusion from polymer spin-on films into III-V semiconductor compounds has been investigated. The Zn distribution profiles have been found to depend on a relation between the concentration of Zn introduced in the near-surface region of a semicond
Autor:
E. D. Belyakova, N.M. Shmidt, L. S. Berman, R. V. Karzhavin, I.A. Mokina, A. T. Gorelenok, I. N. Karimov, S. V. Belyakov
Publikováno v:
MRS Proceedings. 284
Investigations of plasma grown native oxides on indium phosphide carried out recently [1,2] have shown that these oxides exhibit properties which are promising to be used in MIS structures on InP, due to their stable composition which includes [InxPy
Autor:
I.A. Mokina, V. M. Mikoushkin, I. N. Karimov, S. V. Belyakov, E. D. Belyakova, S. E. Sysoev, N.M. Shmidt, A. T. Gorelenok, L. S. Berman, R. V. Karzhavin
Publikováno v:
MRS Proceedings. 284
Ellipsometry and XPS investigations of RF plasma grown native oxide and C-V measurements of its interface were performed.Strong dependence of the composition of the plasma grown native oxides and electric properties of MIS structures on the time of p
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