Zobrazeno 1 - 8
of 8
pro vyhledávání: '"I. Z. Indutnyy"'
Autor:
G. Huhn, Tivadar Lohner, E. Vlaikova, I. Z. Indutnyy, A. Szekeres, Peter Petrik, P.E. Shepeliavyi, I. Lisovskyy, S. Zlobin, Károly Havancsák
Publikováno v:
Vacuum. 84:115-118
In this work we present results on the ellipsometric study of SiO x films in the spectral range of 280–820 nm. The films were deposited by vacuum thermal evaporation of SiO onto Si substrates heated at 150 °C. To stimulate the formation of silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d879dee9b9e1b6e520aeb2f28cce6b
https://doi.org/10.1016/j.vacuum.2009.05.016
https://doi.org/10.1016/j.vacuum.2009.05.016
Publikováno v:
physica status solidi (b). 245:2756-2760
The effect of enhanced hydrostatic pressure (HP, (10–12) × 108 Pa) on thermally stimulated phase decomposition of silicon suboxide layers processed at 450–1000 °C was investigated by infrared spectroscopy and photoluminescence measurements. HP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c15027cf67906713c37373d0c73ec73
https://doi.org/10.1002/pssb.200844049
https://doi.org/10.1002/pssb.200844049
Publikováno v:
Semiconductors. 41:1248-1254
The effect of chemical treatment in saturated vapors of ammonia and acetone on the spectral composition and intensity of photoluminescence in porous SiO{sub x} films containing Si nanocrystals (nc-Si) is studied. The porosity of the SiO{sub x} films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f65b8ac37642495da942eca8c7fb6257
https://doi.org/10.1134/s1063782607100223
https://doi.org/10.1134/s1063782607100223
Autor:
Ágnes Cziráki, I. Lisovskyy, P.E. Shepeliavyi, A. Szekeres, T. Nikolova, D. Mazunov, I. Z. Indutnyy, Gy. J. Kovacs, A. Paneva
Publikováno v:
Materials Science and Engineering: B. :504-507
Thin vacuum-evaporated SiO x films with embedded Si nanoparticles are studied by applying spectral ellipsometry and transmission electron microscopy. The Si nano-inclusions in the oxide matrix were formed by thermal annealing in argon at 700 and 1000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9acff94b4759bb93d3eeed1544eb66a5
https://doi.org/10.1016/j.mseb.2005.08.124
https://doi.org/10.1016/j.mseb.2005.08.124
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 7:161-167
SiOx thin films (x ~1.3) have been prepared by thermal vacuum evaporation of silicon monoxide. A thermally stimulated (annealling temperatures – 700 and 1000°C) structural transformation of the Si-O phase in the SiOx layers, which leads to the for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a690d8d340d462e866828a6cc1415325
https://doi.org/10.15407/spqeo7.02.161
https://doi.org/10.15407/spqeo7.02.161
Inhomogeneous SiOx〈Fe〉 metal-dielectric films as a material for infrared thermal radiation detectors
Publikováno v:
Technical Physics. 48:261-264
A vacuum deposition method for producing SiOx〈Fe〉 composite metal-dielectric films in which the metal concentration in the SiOx dielectric matrix varies across thickness is described. The reflection and transmission of the films in the 2–12 µm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1d7f76db7da66080419c2b4ef3f6f59
https://doi.org/10.1134/1.1553571
https://doi.org/10.1134/1.1553571
Autor:
A. S. Oberemok, B. N. Gnennyy, Petro M. Lytvyn, P. E. Shepelyavyi, I. Lisovskyy, D. Mazunov, I. Z. Indutnyy, N. V. Sopinskyy
Publikováno v:
Semiconductors. 37:97-102
A thermally stimulated structural transformation of the Si-O phase in the SiOx layers, which leads to the formation of Si nanoinclusions, was investigated using gravimetry, infrared spectroscopy, multiple-angle ellipsometry, and atomic-force microsco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd5402310a8ba0ff444a95e9c8d5588d
https://doi.org/10.1134/1.1538546
https://doi.org/10.1134/1.1538546
Autor:
Chang Won Park, P. E. Shepeliavyi, I. Z. Indutnyy, E. V. Michailovskaya, Young Rag Do, J. B. Lee
Publikováno v:
Technical Physics. 47:720-725
Thin (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::123d3b1ccf6952e3bc763cbaf8a14350
https://doi.org/10.1134/1.1486195
https://doi.org/10.1134/1.1486195