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pro vyhledávání: '"I. Z. Indutniĭ"'
Autor:
I. Z. Indutniĭ, P. E. Shepelyavyĭ, M. V. Muravskaya, V. V. Voitovich, I. Lisovskyy, E. G. Gule
Publikováno v:
Semiconductors. 42:576-579
The spectra of infrared transmittance and photoluminescence of thin-film nc-Si/SiO2 structures containing nanocrystalline silicon (nc-Si) and subjected to ionizing radiation (60Co) in the dose range D= 104−107 rad are studied. It is shown for the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51fb0cde21e683af4ff135f2ce85d440
https://doi.org/10.1134/s1063782608050151
https://doi.org/10.1134/s1063782608050151
