Zobrazeno 1 - 4
of 4
pro vyhledávání: '"I. Yu. Umansky"'
Autor:
I. A. Kirovskaya, R. V. Ekkert, A. O. Ekkert, E. V. Mironova, I. Yu. Umansky, A. I. Blesman, D. A. Polonyankin, L. V. Kolesnikov, E. N. Kopylova, V. B. Goncharov
Publikováno v:
Омский научный вестник, Vol 2 (164), Pp 56-61 (2019)
According to the developed methodology, based on the isothermal diffusion of the initial binary compounds (InP, ZnS), their physical and physicochemical properties, solid solutions of different composition ((InP)x (ZnS)1-x) have been obtained. X
Externí odkaz:
https://doaj.org/article/2a62cbd6fb6241c180b38cc7ffb4a1f4
Publikováno v:
Semiconductors. 54:1459-1466
The bulk (crystal-chemical and structural) and surface (acid base) properties of InBV–ZnS semiconductor solid solutions with different AIII–BV (InP and InAs) binary components are investigated under identical conditions. The regularities of the v
Autor:
L. V. Kolesnikov, D. A. Polonyankin, I. A. Kirovskaya, I. Yu. Umansky, A. I. Blesman, E. N. Kopylova, R. V. Ekkert, E. V. Mironova, A. O. Ekkert, V. B. Goncharov
Publikováno v:
Omsk Scientific Bulletin. :56-61
Autor:
A. O. Ekkert, Yu. I. Matyash, A. V. Yureva, L. V. Kolesnikov, I. Yu. Umansky, I. A. Kirovskaya, S. A. Korneyev
Publikováno v:
Omsk Scientific Bulletin. :111-115