Zobrazeno 1 - 4
of 4
pro vyhledávání: '"I. Yu. Strashkova"'
Autor:
Alexander S. Krylov, Shangjr Gwo, William J. Schaff, V. Yu. Davydov, I. Yu. Strashkova, Y.-L. Hong, H.-M. Lee, Alexander N. Smirnov, Hai Lu, A. A. Klochikhin
Publikováno v:
Semiconductors. 44:161-170
It is shown that a study of the dependence of impurity-related resonant first-order Raman scattering on the frequency of excitation light makes it possible to observe the dispersion of polar optical and acoustic branches of vibrational spectrum in he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4c5aa85c8374f2b43a8203ba6929b4d
https://doi.org/10.1134/s1063782610020065
https://doi.org/10.1134/s1063782610020065
Autor:
I. Yu. Strashkova, A. A. Klochikhin
Publikováno v:
Semiconductors. 43:760-764
The quantum theory of the accumulation layer for n-type InN crystals is developed. The Coulomb interaction and the exchange interaction in the Kohn-Sham local density approximation is considered. The applicability of the theory is demonstrated by usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b18dfc142084880749fd24fa2508ea6c
https://doi.org/10.1134/s1063782609060141
https://doi.org/10.1134/s1063782609060141
Autor:
A. A. Klochikhin, Hong-Ying Chen, V. Yu. Davydov, Shangjr Gwo, A. A. Gutkin, Pavel N. Brunkov, M. E. Rudinsky, I. Yu. Strashkova
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters. 1:159-161
The exact solution of the Thomas–Fermi equation for a planar accumulation layer of a degenerate semiconductor is presented. The obtained results are compared with theoretical literature data. The applicability of the solution is demonstrated by usi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c01604dac34e2af32c521e86b08aedb
https://doi.org/10.1002/pssr.200701096
https://doi.org/10.1002/pssr.200701096
Autor:
V. Yu. Davydov, A. A. Klochikhin, H.-M. Lee, Hai Lu, Alexander N. Smirnov, I. Yu. Strashkova, Alexander S. Krylov, Shangjr Gwo, Y.-L. Hong, William J. Schaff
Publikováno v:
Physical Review B. 80
It is shown that dispersions of ${E}_{1}(\text{LO})$ and ${A}_{1}(\text{LO})$ modes of InN can be restored in a wide interval of wave vectors by studying impurity-induced first-order Raman scattering as a function of exciting light energy. It is also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d4d30097ce8b75908936750abbe22d8
https://doi.org/10.1103/physrevb.80.081204
https://doi.org/10.1103/physrevb.80.081204