Zobrazeno 1 - 2
of 2
pro vyhledávání: '"I. Yu. Rusanovich"'
Autor:
S. Yu. Karpov, A. L. Ter-Martirosyan, V. P. Chaly, D. M. Demidov, I. Yu. Rusanovich, V.E. Myachin, A. P. Shkurko, Yu.V. Pogorelsky, G. A. Fokin
Publikováno v:
Journal of Crystal Growth. 150:1350-1353
The results of statistical analysis of the characteristics of high-power semiconductor lasers grown by molecular beam epitaxy are presented. Three types of heterostructures are compared. It is shown that widening of a graded refractive index (GRIN) w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a69831d0cb106e86a3c4fe2eb9d6e1e5
https://doi.org/10.1016/0022-0248(95)80158-9
https://doi.org/10.1016/0022-0248(95)80158-9
Autor:
A P Shcurko, G. A. Fokin, A Yu Ostrovsky, V. P. Chaly, Yu.V. Pogorelsky, A. L. Ter-Martirosyan, V.E. Myachin, S. Yu. Karpov, M. I. Etinberg, I. Yu. Rusanovich, A Sokolov, N A Strugov
Publikováno v:
Semiconductor Science and Technology. 9:345-348
The influence of the growth temperature of ternary compounds on the degradation rate of AlGaAs/GaAs laser diodes was studied. The optimal temperature was found to be 700 degrees C. A further reduction in the degradation rate may be achieved by using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b46aa2963acbd0b2f5f137a20a0cb98
https://doi.org/10.1088/0268-1242/9/4/002
https://doi.org/10.1088/0268-1242/9/4/002