Zobrazeno 1 - 5
of 5
pro vyhledávání: '"I. Yu. Pashenkin"'
Autor:
S. S. Ustavschikov, M. Yu. Levichev, I. Yu. Pashenkin, N. S. Gusev, S. A. Gusev, D. Yu. Vodolazov
Publikováno v:
Journal of Experimental and Theoretical Physics. 135:226-230
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44d01380235793819f3cd512b55c005a
https://doi.org/10.1134/s1063776122080064
https://doi.org/10.1134/s1063776122080064
Publikováno v:
Physical Review B. 106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::250692b09e751dc36e71a9c6fe96f748
https://doi.org/10.1103/physrevb.106.l220408
https://doi.org/10.1103/physrevb.106.l220408
Publikováno v:
Semiconductors. 51:1456-1459
The capabilities of a technique based on combined photoluminescence and Raman-spectroscopy measurements upon lateral scanning across the cleaved edge of heterostructures for monitoring the strain profile and the thickness of epitaxial layers are demo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97d016119498f3a85b0ef005cde1f6af
https://doi.org/10.1134/s1063782617110239
https://doi.org/10.1134/s1063782617110239
Autor:
A. V. Zdoroveishchev, I. Yu. Pashenkin, S. M. Plankina, Aleksey Nezhdanov, A. E. Paraffin, B. N. Zvonkov, S. A. Pavlov, V. P. Lesnikov, O. V. Vikhrova, Yu. A. Danilov, A. V. Kudrin
Publikováno v:
Physics of the Solid State. 59:2150-2154
Laser annealing experiments were performed in order to increase the concentration of electrically active manganese in the layers of A3B5: Mn semiconductors. An LPX-200 KrF excimer laser with a wavelength of 248 nm and a pulse duration of ~30 ns was u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a31706153eacc0c739f89df6a4a606f8
https://doi.org/10.1134/s1063783417110324
https://doi.org/10.1134/s1063783417110324
Autor:
Yu. A. Danilov, I. Yu. Pashenkin, N. Yu. Konnova, O. V. Vikhrova, Aleksey Nezhdanov, S. M. Plankina, B. N. Zvonkov
Publikováno v:
Semiconductors. 50:1539-1542
Scanning confocal Raman spectroscopy is used to study the crystal structure of GaAs irradiated with Mn+ ions with subsequent pulse laser annealing. The scanning of cleaved cross sections of samples shows that the structure completely recovers over th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c47bde61e8ce7da2809050a79c29e136
https://doi.org/10.1134/s106378261611021x
https://doi.org/10.1134/s106378261611021x