Zobrazeno 1 - 10
of 23
pro vyhledávání: '"I. Yo. Kukharskyy"'
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 1, Pp 89-93 (2018)
Fundamental absorption edge of (Y0.06Ga0.94)2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated using the method of optical spectroscopy. It was established that these films are formed in the monoclinic structure of
Externí odkaz:
https://doaj.org/article/d6a33cf6cdf54fcf8aad34e4ea6a5bbc
Publikováno v:
Фізика і хімія твердого тіла, Vol 17, Iss 4, Pp 515-519 (2017)
The structure, phase composition and surface morphology of thin films β-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga2O3 - fus
Externí odkaz:
https://doaj.org/article/976f9c7b499c4871a68e0680b8842918
Publikováno v:
Фізика і хімія твердого тіла, Vol 16, Iss 1, Pp 74-78 (2016)
Photoexcitation spectra and luminescence of thin films of ZnGa2O4 under photo-, cathode and X-ray excitation were investigated. Luminescence spectra were factorized on ultimate constituents using Alentsev-Fock method. Emission bands with maximums at
Externí odkaz:
https://doaj.org/article/0446d42450db4e88a43e3c3bf39f4543
Publikováno v:
Journal of Applied Spectroscopy. 88:1152-1156
The long-wavelength edge of the fundamental absorption band of thin Y2O3 films obtained by radiofrequency ion-plasma sputtering is investigated. The edge of interband absorption after annealing of the films in an atmosphere of argon, oxygen, or a mix
Publikováno v:
Journal of Applied Spectroscopy. 88:257-260
The long-wavelength edge of the fundamental absorption band of β-Ga2O3 thin films obtained by radio-frequency ion-plasma sputtering is studied. The edge of interband absorption during annealing of the films in oxygen, argon, and hydrogen is shown to
Publikováno v:
Journal of Applied Spectroscopy. 86:1010-1013
X-ray luminescence spectra of β-Ga2O3 thin films obtained by radio-frequency (RF) ion-plasma sputtering were studied at 80–300 K. The measured spectra were simulated in the framework of the linear electron–phonon coupling model. Luminescence cen
Publikováno v:
Journal of Applied Spectroscopy. 86:711-714
The surface structure and cathodoluminescence (CL) spectra of thin films of Y2O3:Eu and Gd2O3:Eu, obtained by high-frequency ion-plasma sputtering, were investigated. By analysis of the form of the cathodoluminescence spectra it was shown that it is
Publikováno v:
2021 IEEE 12th International Conference on Electronics and Information Technologies (ELIT).
The cathodoluminescence properties of thin oxide films $\beta-\mathbf{Ga}2\mathbf{O}_{3},\mathbf{ZnGa}_{2}\mathbf{O}_{4},\mathbf{ZnGn}_{2}\mathbf{O}_{4}:\mathbf{Mn},\mathbf{Zn}\mathbf{Ga}_{2}\mathbf{O}_{4}:\mathbf{Cr},\mathbf{Y}_{2}\mathbf{O}_{3}:\ma
Publikováno v:
Фізика і хімія твердого тіла, Vol 18, Iss 1, Pp 89-93 (2018)
Fundamental absorption edge of (Y0.06Ga0.94)2O3 thin films, obtained by radio-frequency ion-plasmous sputtering, was investigated using the method of optical spectroscopy. It was established that these films are formed in the monoclinic structure of
Publikováno v:
Journal of Applied Spectroscopy. 84:1072-1077
The surface structure and cathodoluminescence (CL) spectra of thin films of Y2O3:Eu obtained by HF ion plasma sputtering were investigated by varying the activator concentration in the range of 1.0–7.5 mole%. The possibility of creating irregular s