Zobrazeno 1 - 7
of 7
pro vyhledávání: '"I. Ye. Lopatynskyi"'
Autor:
I. V. Kurilo, I. O. Rudyi, Bartlomiej S. Witkowski, Y. Tur, M. S. Frugynskyi, E. Lusakowska, I. S. Virt, G. Luka, I. Ye. Lopatynskyi
Publikováno v:
Journal of Crystal Growth. 432:19-23
Lead telluride (PbTe) undoped films with various thicknesses (40–1800 nm) were grown by pulsed laser deposition (PLD) on different single crystal substrates (KCl, Si) and at different substrate temperatures (30 °C, 200 °C). Structural and electri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::250ba77b6593d2b1b0a26f0f34030d18
https://doi.org/10.1016/j.jcrysgro.2015.09.008
https://doi.org/10.1016/j.jcrysgro.2015.09.008
Publikováno v:
2018 IEEE 8th International Conference Nanomaterials: Application & Properties (NAP).
In this paper, we report on the structural, mechanical and electrical properties of nanocryst alline lead telluride thin films as a n- and p- type semiconductor deposited on glass substrates at different temperature PLD method. The structure and morp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1376b32e349a2279ed04fcbaa0dcd2d
https://doi.org/10.1109/nap.2018.8915125
https://doi.org/10.1109/nap.2018.8915125
Autor:
G. Luka, I. S. Virt, L. F. Linnik, I. O. Rudyj, I. V. Kurilo, V. V. Tetyorkin, I. Ye. Lopatynskyi, Piotr Potera
Publikováno v:
Semiconductors. 47:1003-1007
The properties of Sb2S3 and Sb2Se3 thin films of variable thickness deposited onto Al2O3, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180°C in a vacuum chambe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd67b0879dddce801447fc219a7db178
https://doi.org/10.1134/s1063782613070233
https://doi.org/10.1134/s1063782613070233
Publikováno v:
Journal of Nano- and Electronic Physics. 10:05036-1
Метод функції Гріна, реалізований у першому порядку теорії збурення (GW), був застосований для точного опису електронної структури перов
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdb7b0c04c5312a660436211d8c0a22a
https://doi.org/10.21272/jnep.10(5).05036
https://doi.org/10.21272/jnep.10(5).05036
Publikováno v:
Journal of Nano- and Electronic Physics. 9:05039-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c72842c4a0ec81ad271cc57d7c4100b0
https://doi.org/10.21272/jnep.9(5).05039
https://doi.org/10.21272/jnep.9(5).05039
Publikováno v:
Journal of Nano- and Electronic Physics. 8:02016-1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edacd20f6112763e3ab2edba74c5cd9c
https://doi.org/10.21272/jnep.8(2).02016
https://doi.org/10.21272/jnep.8(2).02016
Publikováno v:
Journal of Electronic Materials. 46(1):175-181
Three lead chalcogenide films, PbTe, PbSe, and PbS, with a high structural quality were grown by pulsed lased deposition (PLD). The films were grown on single crystal substrates (Si, KCl, Al2O3) and on Si covered with a Si3N4 buffer layer. The Si3N4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::48715d764cc6b325eac69a0834486577