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Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 8:1491-1497
The resistance as a function of annealing temperature for thin gold films on a SiO2 layer on silicon (100) passes through a minimum near 600 °C for times at temperature ≤60 min. The structural changes associated with this electrical behavior have
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44b2ccf2eb5c07c4eac8fc24db3b0c75
https://doi.org/10.1116/1.576863
https://doi.org/10.1116/1.576863
