Zobrazeno 1 - 10
of 12
pro vyhledávání: '"I. Vivek Anand"'
Publikováno v:
Silicon. 14:4589-4600
The influence of trap carriers at the Si-SiO2 interface near the source channel junction is analysed in this paper. The drain current is computed using the analytical model and it is expanded for constructing the SiO2/HfO2 cylindrical gate tunnel FET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a5aa9239351d8dca20fff1fddeb4960
https://doi.org/10.1007/s12633-021-01263-5
https://doi.org/10.1007/s12633-021-01263-5
Publikováno v:
Materials Today: Proceedings. 45:4026-4035
Three different work functions are taken in this paper for investigating a hetero-junction tri gate tunnel FET and it is simulated using TCAD. The proposed device employs hetero-junction structure that exhibits lesser band-gap between source and intr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07dff5aa13ba03f5c207a278de280870
https://doi.org/10.1016/j.matpr.2020.10.752
https://doi.org/10.1016/j.matpr.2020.10.752
Publikováno v:
Journal of Computational Electronics. 19:1450-1462
Analytical modeling of a dual-material asymmetric heterodielectric-gate tunnel field-effect transistor (FET) is carried out based on the Poisson equation and parabolic approximation techniques. An asymmetric gate with two materials having different w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35bfb277eb46ff4c6b66a06a89a07f88
https://doi.org/10.1007/s10825-020-01563-w
https://doi.org/10.1007/s10825-020-01563-w
Publikováno v:
Journal of Nano Research. 62:47-58
Analytical modelling for a tri material cylindrical gate tunnel FET is developed in this paper. Poisson equation and parabolic approximation technique are employed to develop the analytical model of the proposed device. Inorder to eliminate the influ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::165b81c7d641c973dde8119ac2386ff4
https://doi.org/10.4028/www.scientific.net/jnanor.62.47
https://doi.org/10.4028/www.scientific.net/jnanor.62.47
Publikováno v:
Journal of Pharmaceutical Negative Results; 2022 Special Issue, Vol. 13, p362-371, 10p
Autor:
K. Mari Priyadharshini, A. Karthihaa, L. Sivasankari, S. Karthika, T. S. Arun Samuel, I. Vivek Anand
Publikováno v:
INTERNATIONAL VIRTUAL CONFERENCE ON RECENT MATERIALS AND ENGINEERING APPLICATIONS FOR SUSTAINABLE ENVIRONMENT (ICRMESE2020).
Development of high performance embedded platforms concentrates on handling huge computational requirements of complex algorithm. For high ended applications, execution of the processor will shift agreeing to the code being executed. Consequent enlig
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a639a751f18ca688aabfec9f46d5b51
https://doi.org/10.1063/5.0058218
https://doi.org/10.1063/5.0058218
Publikováno v:
Superlattices and Microstructures. 162:107099
In semiconductor industry, at nanoscale dimensions, numerous field effect devices have been proposed and investigated for further improvement in performance of low power circuit and system. In the present research report, a novel low power FET device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c96ba3d95dec91bb7ec11430a684bb00
https://doi.org/10.1016/j.spmi.2021.107099
https://doi.org/10.1016/j.spmi.2021.107099
Autor:
A. Kamaraj, I. Vivek Anand
Publikováno v:
International Conference on Information Communication and Embedded Systems (ICICES2014).
The circuits like Logic gates, Adders, Multipliers are the basic building block of the digital circuits. These combinational circuits can be designed by using the concepts of the reversible logic. The reversible logic is either a physically reversibl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2a1c022e85b2a1b32f0a304ddaad34e0
https://doi.org/10.1109/icices.2014.7034011
https://doi.org/10.1109/icices.2014.7034011
Conference
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Akademický článek
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