Zobrazeno 1 - 10
of 12
pro vyhledávání: '"I. V. Yakimchuk"'
Autor:
O. N. Dubinin, J. V. Bondareva, Y. O. Kuzminova, A. P. Simonov, I. A. Varfolomeev, I. V. Yakimchuk, S. A. Evlashin
Publikováno v:
Journal of Porous Materials.
Autor:
I. A. Varfolomeev, I. V. Yakimchuk
Publikováno v:
Vestnik komp'iuternykh i informatsionnykh tekhnologii. :3-9
Autor:
I. A. Varfolomeev, I. V. Yakimchuk
Publikováno v:
Vestnik komp'iuternykh i informatsionnykh tekhnologii. :3-9
Publikováno v:
Scientific Visualization. 12
Publikováno v:
Technical Physics. 59:143-147
An approach to quality diagnostics of concave spherical surfaces by a grazing X-ray beam is considered. Errors of the approach in locating defects and finding their sizes are estimated. The algebraic method of experimental data reconstruction is cons
Publikováno v:
Journal of Physics: Conference Series. 1368:032015
Digital rock physics is used for the investigation of oil and gas reservoirs. It involves various mathematical simulations on a digital representation of a rock sample, which is usually obtained with imaging techniques. Focused ion beam scanning elec
Publikováno v:
Crystallography Reports. 58:355-364
Extremely low intensity of most existing laboratory X-ray sources (λ ∼ 0.01–10 nm) calls for the development of collimating and concentrating optics, which allow to increase significantly the radiation power on the sample surface. The problem of
Publikováno v:
JETP Letters. 94:680-683
A method has been developed to obtain two-dimensional X-ray tomographic images of deposit objects located on bent mirror surfaces. A procedure that makes it possible to obtain two-dimensional X-ray image of an object (fingerprint) located on the surf
Autor:
A. L. Tolstikhina, I. V. Yakimchuk, E. O. Tikhonov, V. E. Asadchikov, A. V. Butashin, M. L. Zanaveskin, V. M. Kanevskii, B. G. Zakharov, I. A. Prokhorov, A. E. Muslimov, Yu. V. Grishchenko, Yu. O. Volkov, Boris S. Roshchin
Publikováno v:
Crystallography Reports. 56:456-462
The possibility of characterizing a number of practically important parameters of sapphire substrates by X-ray methods is substantiated. These parameters include wafer bending, traces of an incompletely removed damaged layer that formed as a result o
Publikováno v:
Journal of Physics: Conference Series. 1096:012046