Zobrazeno 1 - 2
of 2
pro vyhledávání: '"I. V. Teterkina"'
Autor:
I. V. Teterkina, N. A. Chernov, M. D. Vilisova, Yu. G. Kataev, L. G. Lavrent'eva, I. A. Bobrovnikova
Publikováno v:
Russian Physics Journal. 38:147-150
Epitaxial layers of gallium arsenide doped with zinc and cadmium were grown in a chloride vapor-transport system using diethylzinc and dimethylcadmium as the sources of the impurity. We studied the effect of the inlet pressure of the impurities and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd79ad45eebf86010843ddd50dc76b8
https://doi.org/10.1007/bf00560238
https://doi.org/10.1007/bf00560238
Publikováno v:
Soviet Physics Journal. 35:136-139
A study has been made of the dependence of the crystal lattice parameter and the structural perfection of epitaxial layers of InxGa1−xAs on substrates of GaAs and InP and on the composition of the solid solution. The electrophysical properties of l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::557c2b21899f88cad737c1d820121b0b
https://doi.org/10.1007/bf00936866
https://doi.org/10.1007/bf00936866