Zobrazeno 1 - 4 of 4 pro vyhledávání: '"I. V. Shemerov"'
1
Deep traps determining the non-radiative lifetime and defect band yellow luminescence in n-GaN
Autor: I. V. Shemerov, Alexander Y. Polyakov, Stephen J. Pearton, In Hwan Lee, S. A. Tarelkin, Eugene B. Yakimov, Kang Bin Bae, N. B. Smirnov, Andrei V. Turutin
Publikováno v: Journal of Alloys and Compounds. 686:1044-1052
Deep traps spectra measurements were performed for a group of n-GaN films grown by metalorganic chemical vapor deposition (MOCVD) on sapphire using standard MOCVD and two versions of lateral overgrowth techniques, the epitaxial lateral overgrowth (EL
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ebe0bc20a7c5f1adfa8e26860dc02897
https://doi.org/10.1016/j.jallcom.2016.06.297
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4
Studies of deep level centers determining the diffusion length in epitaxial layers and crystals of undoped n-GaN
Autor: N. B. Smirnov, Eugene B. Yakimov, S. A. Tarelkin, In Hwan Lee, I. V. Shemerov, Andrei V. Turutin, Stephen J. Pearton, Alexander Y. Polyakov
Publikováno v: Journal of Applied Physics. 119:205109
A wide variety of parameters were measured for undoped n-GaN grown by hydride vapor phase epitaxy and compared to n-GaN films grown by conventional and lateral overgrowth metalorganic chemical vapor deposition. The parameters included deep level elec
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::690dc73a7a074514d299b2e5573c36fc
https://doi.org/10.1063/1.4952734
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