Zobrazeno 1 - 10
of 24
pro vyhledávání: '"I. V. Rogozin"'
Publikováno v:
Радиофизика и электроника, Vol 23, Iss 2, Pp 4-8 (2019)
Subject and purpose. The article is devoted to the investigation of the photovoltaic effect in n-InSb under optical transitions between the spin subbands of the Landau levels for the ultraquantum limit. The geometry is considered when the polarizatio
Externí odkaz:
https://doaj.org/article/a35a1cb3cf7342fdb4161a35b88a6fc5
Publikováno v:
Inorganic Materials. 49:568-571
ZnO:N epitaxial films have been grown by reactive magnetron sputtering. The effect of annealing in atomic oxygen on the structural and electrical properties of the ZnO:N films has been studied by X-ray diffraction, atomic force microscopy, Hall effec
Publikováno v:
Inorganic Materials. 49:272-277
Epitaxial ZnO:P films have been produced by annealing ZnP2 substrates in atomic oxygen and characterized by X-ray diffraction, atomic force microscopy, Hall effect measurements, X-ray photoelectron spectroscopy, and photoluminescence measurements. Th
Publikováno v:
Inorganic Materials. 46:1161-1165
n-ZnO/p-GaN:Mg heterostructures have been produced by the thermal oxidation of thin Zn layers using radical-beam gettering epitaxy. The structural and electroluminescent properties of the n-ZnO/p-GaN:Mg heterostructures have been studied.
Publikováno v:
Inorganic Materials. 46:948-952
n-Type ZnO〈Ga〉 films were implanted with 150-keV N+ (As+) ions to a dose of 7 × 1015 cm−2 and then annealed in atomic oxygen at different temperatures. p-Type conductivity was obtained at annealing temperatures in the range 770–870 K. The pa
Publikováno v:
Inorganic Materials. 45:391-398
One possible compensation mechanism for hole conduction in ZnO:N crystals has been examined using the quasi-chemical approach. The results indicate that, under equilibrium annealing or growth conditions, p-type ZnO:N crystals are difficult to obtain
Autor:
I. V. Rogozin
Publikováno v:
Semiconductors. 43:21-25
The epitaxial ZnO:P films are fabricated by annealing the ZnP2 wafers in atomic oxygen (oxygen radicals). The properties of the films are studied by X-ray diffraction analysis, atomic force microscopy, Auger spectroscopy, and photoluminescence measur
Publikováno v:
Inorganic Materials. 44:1208-1213
Defect equilibrium diagrams have been constructed for intrinsic and extrinsic defects in GaN:Mg crystals using the quasi-chemical formalism, and the formation of (V N-MgGa)× and (V N-MgGa ••) defect complexes has been analyzed. The results indic
Publikováno v:
Inorganic Materials. 43:714-719
We report the properties of p-n junctions produced in ZnO films by As+ ion implantation followed by annealing in atomic oxygen. The starting films, n-ZnO〈Ga〉, were grown by magnetron sputtering on amorphous SiO2 substrates. As shown by x-ray diff
Autor:
M. B. Kotlyarevsky, I. V. Rogozin
Publikováno v:
Semiconductors. 41:555-559
Thin GaN films were grown on GaAs(111) substrates by radical-beam gettering epitaxy. The structural quality of the films was studied by high-resolution x-ray diffraction. The chemical composition of the GaAs surface and GaN film was studied by x-ray