Zobrazeno 1 - 4
of 4
pro vyhledávání: '"I. V. Nazarikov"'
Autor:
Elena O. Filatova, Dmitry Marchenko, K. M. Lysenkov, I. V. Nazarikov, A. A. Ovchinnikov, Andrey Sokolov, V. M. Kashkarov
Publikováno v:
Technical Physics Letters. 36:119-121
The structure of porous silicon (por-Si) obtained by electrochemical etching of Si(100) single crystal wafers in an aqueous ammonium fluoride solution with isopropyl alcohol additions has been studied using X-ray reflection spectroscopy, X-ray photoe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::439ce7d5523d8babef0caf8e02abc32e
https://doi.org/10.1134/s1063785010020082
https://doi.org/10.1134/s1063785010020082
Autor:
Lenshin, A.1 lenshinas@phys.vsu.ru, Kashkarov, V.1, Seredin, P.1, Spivak, Yu.2, Moshnikov, V.2
Publikováno v:
Semiconductors. Sep2011, Vol. 45 Issue 9, p1183-1188. 6p.
Autor:
Filatova, E. O.1,2,3 feo@EF14131.spb.edu, Lysenkov, K. M.1,2,3, Sokolov, A. A.1,2,3, Ovchinnikov, A. A.1,2,3, Marchenko, D. E.1,2,3, Kashkarov, V. M.1,2,3, Nazarikov, I. V.1,2,3
Publikováno v:
Technical Physics Letters. Feb2010, Vol. 36 Issue 2, p119-121. 3p. 2 Charts, 2 Graphs.
Publikováno v:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; Feb2011, Vol. 5 Issue 1, p141-149, 9p