Zobrazeno 1 - 10
of 54
pro vyhledávání: '"I. V. Mitchell"'
Autor:
M. A. Bolorizadeh, I. V. Mitchell
Publikováno v:
Iranian Journal of Physics Research, Vol 4, Iss 2, Pp 109-116 (2004)
We have initiated a study to extract concentration profiles of ultra shallow phosphorous implants in silicon complementing published work on ultra shallow boron implant profiles. There is an ever-increasing interest in the production of p-n junctions
Externí odkaz:
https://doaj.org/article/a8f26b99c3764696a92edf34146dda9c
Autor:
M. B. Huang, I. V. Mitchell
Publikováno v:
Journal of Electronic Materials. 28:385-389
The effect of substrate temperature and ion flux on lattice damage in silicon induced by 1.0 MeV Si ion implantation has been investigated using Rutherford backscattering channeling (RBSC) and Raman spectroscopy. Over the temperature range of 77–32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b17106dc3c086e5279662e77befa6a85
https://doi.org/10.1007/s11664-999-0238-0
https://doi.org/10.1007/s11664-999-0238-0
Autor:
I. V. Mitchell, M. B. Huang
Publikováno v:
Journal of Applied Physics. 85:174-181
Boron transient enhanced diffusion (TED) in Si predoped with boron isotope atoms has been studied using secondary ion mass spectroscopy and channeling nuclear reaction analysis. Si crystal was first implanted with 11B ions of various doses and subseq
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac9542a4a19eb7ecdeb8e820709f8920
https://doi.org/10.1063/1.369466
https://doi.org/10.1063/1.369466
Autor:
P. J. Simpson, George C. Weatherly, R. D. Goldberg, T. D. Lowes, I. V. Mitchell, Kimberley C. Hall
Publikováno v:
Canadian Journal of Physics. 74:248-251
Gettering sites comprising dislocations and voids have been formed in silicon at a depth of 0.8 μm by room-temperature implantation with 80 keV energy protons to a fluence of 3 × 1016 cm−2, followed by annealing at a temperature of 800 °C for 20
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5006f1ebd8c0d1544ee038adf7138c9c
https://doi.org/10.1139/p96-868
https://doi.org/10.1139/p96-868
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 12:2357-2362
The analysis and removal of residual damage induced by reactive ion etching of silicon were studied with a new ultrashallow depth‐profiling technique of silicon. In this technique, which is known to give a depth resolution of better than 0.5 nm [La
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1b53d0881ab12978501022532eabae
https://doi.org/10.1116/1.579214
https://doi.org/10.1116/1.579214
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1016-1021
The creation of high resistivity layers by ion implantation of doped InP and InGaAsP epilayers, and the potential of the implant‐isolation technique for the fabrication of InP‐based ridge waveguide lasers, have been investigated. InP and InGaAsP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e79124809736b73d12b1bf68276e40f
https://doi.org/10.1116/1.578806
https://doi.org/10.1116/1.578806
Publikováno v:
Canadian Journal of Physics. 70:789-794
Ion implantation-induced disorder accumulation in Si-implanted InP crystals and the effect of the disorder accumulation on the subsequent electrical activation of the implanted Si have been studied as functions of the Si dose, flux, and implant tempe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6be0fe10625030b606d9800ec9d0f3a
https://doi.org/10.1139/p92-124
https://doi.org/10.1139/p92-124
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:996-1001
The recovery of implant damage, and the activation of Si implanted into InP has been studied over a range of post‐implant anneal temperatures from 295 to 1095 K. 600 keV Si+ ions were implanted to doses ranging from 3.6 × 1011 to 2 × 1014 cm−2,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b54a67ee8d9159c7609568f5a4aa6941
https://doi.org/10.1116/1.577893
https://doi.org/10.1116/1.577893
Autor:
S. Ingrey, J.-M. Baribeau, D. Landheer, H. T. Tang, I. V. Mitchell, W. M. Lau, W. N. Lennard, L. J. Huang
The SiNx/GaAs (110) interface structure of the metal-insulator-semiconductor (MIS) capacitors modified with ultrathin Si or Si/Ge (5 to 15 Å) heterolayers and sulfur passivation were studied by capacitance-voltage (CV) measurements, high resolution
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::612be229cf67e9da1180cc9e628b0a4c
https://nrc-publications.canada.ca/eng/view/object/?id=417a3b57-83dd-481f-974f-9ad521e7d485
https://nrc-publications.canada.ca/eng/view/object/?id=417a3b57-83dd-481f-974f-9ad521e7d485
Publikováno v:
Physical Review B. 44:12180-12188
Silicon (100) wafers have been irradiated at 300 K with silicon ions or helium ions at energies between 0.2 and 5.0 MeV. Fluences ranged from ${10}^{11}$ to ${10}^{16}$ ${\mathrm{cm}}^{\mathrm{\ensuremath{-}}2}$. The associated defect profiles have b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac1630e7667a373dfae726490842cd76
https://doi.org/10.1103/physrevb.44.12180
https://doi.org/10.1103/physrevb.44.12180