Zobrazeno 1 - 10
of 38
pro vyhledávání: '"I. V. Marchishin"'
Autor:
A. P. Kovchavtsev, Yu. G. Sidorov, Anton Latyshev, I. V. Sabinina, A. V. Predein, I. V. Marchishin, G. Yu. Sidorov, V. S. Varavin, V. G. Remesnik, D. V. Marin, M. V. Yakushev, V. V. Vasil’ev, Sergey A. Dvoretsky
Publikováno v:
Journal of Communications Technology and Electronics. 65:316-320
Matrix photosensitive elements based on a HgCdTe semiconductor solid solution on silicon substrates with 640 × 512 elements at a pitch of 25 μm with a long-wavelength sensitivity of 5 μm at half maximum are designed and produced. The scheme and to
Autor:
A. V. Goran, A. K. Bakarov, Anton Latyshev, D. V. Nomokonov, I. V. Marchishin, E. E. Rodyakina, A. A. Bykov, I. S. Strygin
Publikováno v:
JETP Letters. 110:354-358
Low-temperature magnetotransport in a quasi-two-dimensional electron system based on a selectively doped GaAs quantum well with two occupied quantum-confinement subbands with one-dimensional periodic modulation of a potential is investigated. It is s
Autor:
A. K. Bakarov, S. Abedi, S. A. Vitkalov, I. V. Marchishin, D. V. Nomokonov, I. S. Strygin, A. V. Goran, A. A. Bykov
Publikováno v:
JETP Letters. 109:400-405
Electron transport in single GaAs quantum wells of widths from 22 to 46 nm with two populated quantum-confinement subbands ES and EAS is investigated at a temperature of T = 4.2 K in tilted magnetic fields B 72° and α > 85°, respectively. The orig
Autor:
K. S. Zhuravlev, A. I. Toropov, M. S. Aksenov, I. B. Chistokhin, N. A. Valisheva, I. V. Marchishin, Dmitriy V. Dmitriev
Publikováno v:
Technical Physics Letters. 45:180-184
Growth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is e
Autor:
A. V. Goran, A. A. Bykov, E. E. Rodyakina, D. V. Nomokonov, I. S. Strygin, S. A. Vitkalov, I. V. Marchishin, S. Abedi
The effect of microwave radiation on low-temperature electron magnetotransport in a square antidot lattice with a period of d = 0.8 micrometer based on a GaAs quantum well with two occupied energy subbands E1 and E2 is investigated. It is shown that,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::711dfe47417ce0fb4d7eea86e301a947
http://arxiv.org/abs/2101.02071
http://arxiv.org/abs/2101.02071
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 52:630-636
This paper describes the design of readout integrated circuits (ROICs) for hybrid infrared focal plane arrays (IR FPAs). This work contains the estimation of the noise equivalent temperature difference (NETD) of IR FPAs based on frame and row integra
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 51:198-204
This paper presents the physical and technical principles of readout integrated circuit (ROIC) for reading and preprocessing focal plane array signals in the infrared spectral range 8–14 μm. The noise equivalent temperature difference of long-wave
Publikováno v:
JETP Letters. 99:303-308
Nonlinear magnetotransport of two-dimensional electrons in square antidot lattices prepared on the basis of selectively doped GaAs/AlAs heterostructures with the period that is much less than the electron mean free path in the initial GaAs quantum we
Publikováno v:
OSA Continuum. 2:2085
The absorption of terahertz radiation by a thin metal absorber in the bolometers of five different designs is analyzed. Main attention is paid to bolometers of three basic configurations: (i) conventional bolometers with a double-layer main optical c
Autor:
I. V. Sabinina, I. V. Marchishin, G. Yu. Sidorov, Yu. G. Sidorov, A. V. Predein, V. V. Vasil’ev
Publikováno v:
Optoelectronics, Instrumentation and Data Processing. 49:485-491
This paper gives the parameters of 320 × 256 element long-wavelength infrared photodetectors fabricated by a new improved technology based on heteroepitaxial mercury-cadmium-tellur structures. In these photodetectors, the variation of the photodiode