Zobrazeno 1 - 2
of 2
pro vyhledávání: '"I. V. Makartsev"'
Publikováno v:
Semiconductors. 56:346-351
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5047f94b86c1ea8979cd916be663fb7
https://doi.org/10.1134/s1063782622070065
https://doi.org/10.1134/s1063782622070065
Autor:
M. M. Kulagina, E. V. Petryakova, A. P. Vasil’ev, M. A. Bobrov, V. A. Belyakov, Nikolai A. Maleev, S. N. Maleev, I. V. Makartsev, Yu. P. Kudryashova, F. A. Ahmedov, S. I. Troshkov, V. M. Ustinov, S. A. Blokhin, A. G. Fefelov, E. L. Fefelova, A. V. Egorov, A. G. Kuzmenkov
Publikováno v:
Technical Physics Letters. 45:1092-1096
A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4539ffa476858a0901881f61d5c920c0
https://doi.org/10.1134/s1063785019110075
https://doi.org/10.1134/s1063785019110075