Zobrazeno 1 - 1
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pro vyhledávání: '"I. V. Kutkov"'
Publikováno v:
Semiconductors. 51:245-248
High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge ca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c7c8e75234d42aabdd07efa46675ae5
https://doi.org/10.1134/s1063782617020063
https://doi.org/10.1134/s1063782617020063
