Zobrazeno 1 - 10
of 21
pro vyhledávání: '"I. V. Kurilo"'
Autor:
I. V. Kurilo, I. O. Rudyi, Bartlomiej S. Witkowski, Y. Tur, M. S. Frugynskyi, E. Lusakowska, I. S. Virt, G. Luka, I. Ye. Lopatynskyi
Publikováno v:
Journal of Crystal Growth. 432:19-23
Lead telluride (PbTe) undoped films with various thicknesses (40–1800 nm) were grown by pulsed laser deposition (PLD) on different single crystal substrates (KCl, Si) and at different substrate temperatures (30 °C, 200 °C). Structural and electri
Autor:
I. V. Kurilo, Pavlo Shapoval, G. A. Il’chuk, V. V. Kus’nézh, M. V. Partyka, R. Yu. Petrus, S. V. Tokarev, R. R. Guminilovich
Publikováno v:
Inorganic Materials. 50:762-767
Thin CdS films have been produced by chemical surface deposition from aqueous solutions of cadmium acetate, Cd(CH3COO)2. We have studied the morphology and optical properties of the CdS films and calculated the mechanical stress induced by the differ
Publikováno v:
Inorganic Materials. 50:559-565
Based on modeling and calculation results and using appropriate photomasks, we produced microtextured Si substrates, which were then coated with a Ni layer. Next, polycrystalline CdTe films were produced on the Ni by quasi-closed space growth. Their
Autor:
G. Luka, I. S. Virt, L. F. Linnik, I. O. Rudyj, I. V. Kurilo, V. V. Tetyorkin, I. Ye. Lopatynskyi, Piotr Potera
Publikováno v:
Semiconductors. 47:1003-1007
The properties of Sb2S3 and Sb2Se3 thin films of variable thickness deposited onto Al2O3, Si, and KCl substrates are investigated by the method of pulsed laser ablation. The samples are obtained at a substrate temperature of 180°C in a vacuum chambe
Publikováno v:
Inorganic Materials. 49:329-334
Polycrystalline CdTe films have been produced on various substrates (glass, ITO-coated glass, sapphire, and microtextured silicon) by quasi-closed space growth, and their structural perfection and surface morphology have been studied by optical micro
Publikováno v:
Semiconductors. 47:349-353
The distribution of hydrostatic strains in Bi3+-doped InAs quantum dots embedded in a GaAs matrix are calculated in the context of the deformation-potential model. The dependences of strains in the material of spherical InAs quantum dots with substit
Publikováno v:
Inorganic Materials. 48:16-20
The initial stages of HgCdTe growth on Al2O3, GaAs, CdTe, and KCl substrates have been studied by electron diffraction. HgCdTe films were produced by pulsed laser deposition and isothermal vapor phase epitaxy. InGaAs films were grown by isothermal ch
Publikováno v:
Semiconductors. 45:1531-1537
The results of investigations of the morphology (grain size, twinning, growth features), elemental composition, and some mechanical properties of polycrystalline CdTe layers deposited on nonoriented substrates in a quasi-closed volume are presented.
Autor:
I. V. Kurilo, S. K. Guba
Publikováno v:
Inorganic Materials. 47:819-823
We have estimated the elastic properties of In1 − xGaxAs/GaAs heterostructures and the characteristics of misfit dislocations in such heterostructures: misfit dislocation spacing, Burgers vector length in various interfaces, surface density of dang
Autor:
A. G. Phedorov, I. O. Rudyi, I. S. Virt, I. V. Kurilo, T. P. Shkumbatyuk, V. V. Tetyorkin, L. F. Linnik, T. Ye. Lopatinskyi
Publikováno v:
Semiconductors. 44:544-549
Bi2Te3 and Sb2Te3 films were obtained by pulsed laser ablation. The films were deposited in vacuum (1 × 10−5 Torr) on single crystal substrates of Al2O3 (0001), BaF2 (111), and fresh cleavages of KCl or NaCl (001) heated to 453–523 K. The films