Zobrazeno 1 - 10
of 54
pro vyhledávání: '"I. V. Krive"'
Publikováno v:
New Journal of Physics, Vol 20, Iss 6, p 063036 (2018)
A theory of a thermally induced single-electron ‘shuttling’ instability in a magnetic nano-mechanical device subject to an external magnetic field is presented in the Coulomb blockade regime of electron transport. The model magnetic shuttle devic
Externí odkaz:
https://doaj.org/article/7be93105cd76427db1e77618d2df0a2a
Autor:
I. V. Krive, Robert I. Shekhter, Hee Chul Park, Danko Radić, Mats Jonson, Anastasia D. Shkop, O. A. Ilinskaya
Publikováno v:
Low Temperature Physics. 45:1032-1040
A thermally driven single-electron transistor with magnetic leads and a movable central island (a quantum dot) subject to an external magnetic field is considered. The possibility of a mechanical instability caused by magnetic exchange interactions b
Tunnel transport of interacting spin-polarized electrons through a single-level vibrating quantum dot in external magnetic field is studied. By using density matrix method, the current-voltage characteristics and the dependence of conductance on temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::63cfe3b7feddb78edde3770518cfdcc0
http://arxiv.org/abs/2103.12001
http://arxiv.org/abs/2103.12001
Current-voltage characteristics of a single-electron transistor with a vibrating quantum dot were calculated assuming vibrons to be in a coherent (non-equilibrium) state. For a large amplitude of quantum dot oscillations we predict strong suppression
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4aa4fbd35b75302f7e5e9677c8eebf18
Publikováno v:
Low Temperature Physics. 43:1392-1398
This is a study of the effect of electron-phonon interactions on the spectrum and transport properties of Dirac electrons in metallic single-wall carbon nanotubes. It is shown that the pseudomagnetic part of the interaction potential of electrons wit
Autor:
V. P. Gusynin, I. V. Krive
Publikováno v:
Low Temperature Physics. 46:209-210
Publikováno v:
Physical Review B
Volume 100
Issue 4
Volume 100
Issue 4
Exchange forces on the movable dot ("shuttle") in a magnetic shuttle device depend on the parity of the number of shuttling electrons. The performance of such a device can therefore be tuned by changing the strength $U$ of Coulomb correlations to blo
Publikováno v:
Synthetic Metals. 216:83-87
Shuttling of electrons in single-molecule transistors with magnetic leads in the presence of an external magnetic field is considered theoretically. For a current of partially spin-polarized electrons a shuttle instability is predicted to occur for a
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 122:114151
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and electromecha
Publikováno v:
Low Temperature Physics. 41:70-74
A theory of single-electron shuttling in an external magnetic field in nanoelectromechanical system with magnetic leads is presented. We consider partially spin-polarized electrons in the leads and electron transport in both the Coulomb blockade regi