Zobrazeno 1 - 5
of 5
pro vyhledávání: '"I. V. Kogan"'
Autor:
N. I. Katsavets, I. V. Kogan, A. R. Sabirov, V. B. Kulikov, I. V. Shukov, V. P. Chaly, D. V. Maslov, A. L. Dudin, A. A. Solodkov
Publikováno v:
Semiconductors. 52:1743-1747
The results of studying the photoelectric characteristics of an nBn structure are presented. The photodiodes based on such structures may have a cutoff wavelength as high as 5 μm. Calculations based on these results show that such photodiodes have a
Autor:
A. P. Shkurko, A. A. Kapralov, D. F. Chernykh, A. L. Dudin, A. N. Alekseev, I. V. Kogan, S. E. Aleksandrov, G. A. Gavrilov, G. Yu. Sotnikova
Publikováno v:
Technical Physics. 49:123-127
An optical pyrometer designed for precision measurement of the GaAs substrate temperature during MBE growth is considered. The pyrometer can be calibrated against a certain characteristic absolute temperature that is visually determined from a change
Autor:
D. M. Demidov, V. P. Chaly, A. N. Alekseev, É. G. Sokolov, N. I. Katsavets, A. L. Dudin, A. L. Ter-Martirosyan, S. B. Aleksandrov, A. P. Shkurko, I. V. Kogan, Yu. V. Pogorel’skii
Publikováno v:
Technical Physics Letters. 28:696-698
The parameters of high-power laser diodes operating at λ=0.94 μm, based on MBE-grown In0.1Ga0.9As/AlGaAs/GaAs quantum-dimensional heterostructures, are reported. The laser diodes manufactured using an optimized MBE technology and specially selected
Publikováno v:
Vestnik khirurgii imeni I. I. Grekova. 154(2)
Publikováno v:
Klinicheskaia meditsina. 66(2)