Zobrazeno 1 - 3
of 3
pro vyhledávání: '"I. V. Khvan"'
Autor:
T. W. Kang, Pulat K. Khabibullaev, R. A. Nusretov, R. L. Hengehold, I. V. Khvan, Y. K. Yeo, Sh. U. Yuldashev
Publikováno v:
Journal of the Korean Physical Society. 53:2913-2916
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f2ce6169427c651f5d99a901cb501e9
https://doi.org/10.3938/jkps.53.2913
https://doi.org/10.3938/jkps.53.2913
Publikováno v:
Doklady Physics. 52:300-302
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14c17c51e6216db7af1cf026f2c90a18
https://doi.org/10.1134/s102833580706002x
https://doi.org/10.1134/s102833580706002x
Publikováno v:
Journal of Applied Physics. 100:013704
Undoped and nitrogen doped ZnO films were deposited on Si substrates by ultrasonic spray pyrolysis at ambient atmosphere. The p type of conductivity for the nitrogen doped ZnO films has been observed. The concentration of free holes in ZnO films has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6852fc712e242227820ede47dc22abed
https://doi.org/10.1063/1.2209773
https://doi.org/10.1063/1.2209773