Zobrazeno 1 - 6
of 6
pro vyhledávání: '"I. V. Kamenskaya"'
Publikováno v:
Semiconductors. 38:769-774
The results of experimental and simulation studies of electrical parameters and the limiting position of the Fermi level in metallurgically and transmutationally doped InSb irradiated with protons (10 MeV, 2×1016 cm−2, 300 K) are reported. It is s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5584d0c799a10c2b99d39fabf0d50787
https://doi.org/10.1134/1.1777597
https://doi.org/10.1134/1.1777597
Publikováno v:
Soviet Physics Journal. 34:644-647
Results of a comparative investigation of InSb crystals irradiated by electrons (1 MeV, 300 K), doped metallurgically (Te, Zn) and by nuclear transformation (Sn), are presented. It is found that as a result of irradiation the Fermi level shifts to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c53007002d84642be423ef611a7c1232
https://doi.org/10.1007/bf00898001
https://doi.org/10.1007/bf00898001
Autor:
V. N. Brudnyi, I. V. Kamenskaya
Publikováno v:
Physica Status Solidi (a). 105:K141-K144
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd247770ddb14ec2e69f1816752f483d
https://doi.org/10.1002/pssa.2211050256
https://doi.org/10.1002/pssa.2211050256
Publikováno v:
Soviet Physics Journal. 22:240-244
A study is made of the electrophysical properties (Ns, μeff) of ionic alloys of GaAs obtained by implanting 150-keV Zn ions at 20 and 300°C. The ion dose D=5·1013–1016 ions/cm2; the alloys were subsequently annealed for 10 min in an H2 atmospher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8da387e372fdd8937d9d10f59100a856
https://doi.org/10.1007/bf00889853
https://doi.org/10.1007/bf00889853
Autor:
M. A. Krivov, M. P. Nikiforova, É. N. Mel'chenko, I. V. Kamenskaya, E. V. Malisova, S. S. Khludkov, E. A. Popova, V. S. Morozov, L. K. Tarasova
Publikováno v:
Soviet Physics Journal. 23:801-806
Investigations were made of the electrical properties, the cathodolumiescence and photoconductivity spectra, and the temperature dependence of the majority carrier lifetime in gallium arsenide with a high concentration of tin (n=2·1018 cm−3, 1.5·
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::56210a51c3ba88fb32ed6de1b363f3cb
https://doi.org/10.1007/bf00892529
https://doi.org/10.1007/bf00892529
Autor:
Inessa Bolshakova, N. G. Kolin, T. A. Moskovets, E. Yu. Makido, V. Brudnyi, V. M. Boiko, D. I. Merkurisov, I. V. Kamenskaya
Publikováno v:
Scopus-Elsevier
The results of studying the effect of irradiation with fast neutrons in an IBR-2 reactor on the characteristics of magnetic-field sensors based on n+-InSb whisker microcrystals are reported (the measurements were carried out in the course of the irra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9a78349be00d913a59f6bfba9d21c511
http://www.scopus.com/inward/record.url?eid=2-s2.0-24044483909&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-24044483909&partnerID=MN8TOARS
