Zobrazeno 1 - 10
of 23
pro vyhledávání: '"I. V. Fekeshgazi"'
Publikováno v:
Journal of Applied Spectroscopy. 82:367-373
Samples of CdP2 single crystals oriented relative to the crystallographic axes were prepared. Their optical quality was studied using conoscopy and atomic-force microscopy. Raman spectra of CdP2 single crystals in polarized and unpolarized light in b
Autor:
T. V. Golyakevich, I. V. Fekeshgazi, T. S. Sidenko, V. M. Trukhan, N. I. Malysh, N. R. Kulish
Publikováno v:
Journal of Applied Spectroscopy. 76:107-111
We studied the two-photon absorption coefficient (β) for cadmium diphosphide (CdP2) single crystals in the tetragonal modification vs. the polarization azimuth (φ) of the incident light for intensities close to the optical breakdown (or optical dam
Publikováno v:
Semiconductors. 39:951-954
The effects of melt temperature T i and quenching rate V i on the structure and optical properties of As2S3 glasses is studied. It is found that the glass band gap increases with T i and V i , whereas a decrease is observed in the glass density, refr
Publikováno v:
physica status solidi c. 8:2725-2727
Two-photon absorption coefficient of cadmium diphosphide single crystals have been measured depending on a polarization azimuth (ϕ) at extreme light intensities near the optical damage threshold (11 MW/cm2). It is shown that the maximum value of thi
Publikováno v:
Journal of Applied Spectroscopy. 63:491-496
Autor:
I. V. Fekeshgazi, Yu. A. Pervak
Publikováno v:
Journal of Applied Spectroscopy. 61:812-816
Autor:
N. I. Malysh, I. Z. Indutnyi, P F Romanenko, N. R. Kulish, S. V. Orlov, V. P. Kunets, Yu. A. Pervak, I. V. Fekeshgazi
Publikováno v:
Measurement Techniques. 35:950-952
Publikováno v:
SPIE Proceedings.
The dependences of linear losses coefficient alpha and two- photon absorption constant beta on structure and concentration x or average coordination number r changes of Ge-As-S glasses along the As-GeS2, As-Ge2S3, As2S3-GeS2 and As2S3-Ge2S3 section h
Publikováno v:
Physics and Applications of Non-Crystalline Semiconductors in Optoelectronics ISBN: 9789401063135
Chalcogenide glasses and films are promising materials for production of different optical elements for integral and optoelectronics and laser devices. Generally it is due to the properties of the glasses that are transparent in visible and IR region
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01e422db2f7751d36ccb776255d297d5
https://doi.org/10.1007/978-94-011-5496-3_17
https://doi.org/10.1007/978-94-011-5496-3_17
Publikováno v:
International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics.
The dependencies of linear losses coefficient cx, two-photon absorption constant , optical damage threshold I and pseudogap width E0 on structure and concentration changes of glasses from glass-forming region of Ge-As-S system along the As-Ge52, As-G