Zobrazeno 1 - 6
of 6
pro vyhledávání: '"I. Uchizaki"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
Silicon bipolar transistors delivering 15W output power with 4.8dB gain and 38% collector efficiency have been developed at 3GHz. The transistors have been fabricated by boron ion-implantation for base region and As diffusion from doped poly silicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e964f8db0d1ca33e21812c34a592fca0
https://doi.org/10.1109/mwsym.1979.1124016
https://doi.org/10.1109/mwsym.1979.1124016
Autor:
J.E. Kenney, M.R. Namordi, M.D. Rubin, T. Ueda, A. Nara, I. Uchizaki, J.J. Whalen, C.L. Cuccia, J.W. Amoss, V.A. Monaco, V. Sokolov, G.D. Alley, R.D. Hess, P.L. Fleming, E.W. Matthews, S. Hori, M.C. Calcatera, H.L. Thal, A. Ballato, S.K. Salmon, T. Susuki, J.M. Borrego, H.E. Carlson, M.L. Thorn, T. Ishii, T. Smith, M. Nakatani, E.T. Harkless, A.R. Kerr, D.N. Zuckerman, K. Yoshinobu, N. Tomita, E.C. Niehenke, Bang-Sup Song, C.A. Hoer, Y. Oda, C. Tsironis, C. Naldi, U. Niggebrugge, T.J. Lukaszek, F.H. Doerbeck, Han-chiu Wang, E.J. Walsh, K. Atsuki, R.J. Gutmann, G.N. Hill, W.A. Cox, E.A. Uliana, F. Fillicori, C.T. Rucker, G.F. Engen, S.E. Sussman-Fort, E. Yamashita, T. Itoh
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:1093-1098
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97cac3e9434c8287b562f02b7e3052da
https://doi.org/10.1109/tmtt.1979.1129796
https://doi.org/10.1109/tmtt.1979.1129796
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 27:1038-1042
Silicon bipolar transistors delivering 15-W CW output power with 4.8-dB gain and 38-percent collector efficiency have been developed at 3 GHz. The transistors have been fabricated by boron ion implantation for base region and arsenic diffusion from d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::987af59490f994c19eb96851dd1aac66
https://doi.org/10.1109/tmtt.1979.1129788
https://doi.org/10.1109/tmtt.1979.1129788
Experimental investigations of highly focused electron beams extracted from a non-spherical cathode†
Autor:
M. Kawamura, I. Uchizaki
Publikováno v:
International Journal of Electronics. 24:317-331
An electron gun of high perveance and high area convergence consisting of a non-spherical cathode, the surface of which is obtained by rotating a curve representing an electric line of force in the electrostatic fringing field between parallel plate-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eef9a26f8023cda94e86188745f26e99
https://doi.org/10.1080/00207216808938028
https://doi.org/10.1080/00207216808938028
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