Resistive switching characteristics of NiO films deposited on top of W or Cu pillar bottom electrodes

Autor: Elena Cianci, Ch. Muller, A. Demolliens, C. Dumas, Marco Fanciulli, Sabina Spiga, I. Tortorelli, Damien Deleruyelle, R. Bez

Publikováno v: Thin Solid Films. 519:3798-3803

This paper demonstrates the feasibility of resistive switching memory elements integrating a nickel oxide film deposited on top of a pillar bottom electrode. The unipolar switching was investigated over a wide temperature range (25 to 125 °C) on sam

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0bfd7f673636c9b1867f9a8083839a5f
https://doi.org/10.1016/j.tsf.2010.12.244

Phase-change memory technology with self-aligned μTrench cell architecture for 90nm node and beyond

Autor: Agostino Pirovano, R. Harrigan, Ferdinando Bedeschi, I. Tortorelli, R. Fackenthal, Andrea Redaelli, T. Marangon, Pietro Petruzza, G. Atwood, Davide Erbetta, Roberto Bez, A. Rigano, Fabio Pellizzer, M. Magistretti, Enrico Varesi

Publikováno v: Solid-State Electronics. 52:1467-1472

A novel self-aligned μTrench-based cell architecture for phase change memory (PCM) process is presented. The low programming current and the good dimensional control of the sub-lithographic features achieved with the μTrench structure are combined

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2139217bb142a5d9c110a2fefadbef97
https://doi.org/10.1016/j.sse.2008.04.031

Impact of the current density increase on reliability in scaled BJT-selected PCM for high-density applications

Autor: A. Ghetti, L. Laurin, I. Tortorelli, Agostino Pirovano, Andrea Redaelli, A. Benvenuti, F. Ottogalli

Publikováno v: 2010 IEEE International Reliability Physics Symposium.

Some of the largest semiconductor companies involved in the non volatile memory business have demonstrated that Phase-Change Memory (PCM) technology has today reached the product maturity at 90 and 65 nm nodes and 45 nm platform is under development.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c84761bea44fcb726c34e7e54c9ca8ec
https://doi.org/10.1109/irps.2010.5488760

Phase Change Memory technology for embedded non volatile memory applications for 90nm and beyond

Autor: G. De Sandre, L. Scotti, Fabio Pellizzer, I. Tortorelli, Roberto Annunziata, Paola Zuliani, M. Tosi, Prelini Carlo Luigi, M. Borghi

Publikováno v: 2009 IEEE International Electron Devices Meeting (IEDM).

A 90nm embedded PCM technology is presented. For the first time the storage element has been integrated in a 6-ML advanced CMOS platform, exploiting the LV n-mos device as cell selector. Very good cell working window and intrinsic reliability both fo

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::832c7472a6c95782762106b6bc9805d1
https://doi.org/10.1109/iedm.2009.5424413

A reliable technique for experimental evaluation of crystallization activation energy in PCMs

Autor: Daniele Ielmini, Andrea Redaelli, Andrea L. Lacaita, I. Tortorelli, A. Pirovano

Publikováno v: IEEE electron device letters
20,1 (2008): 41–43.
info:cnr-pdr/source/autori:A.Redaelli, A.Pirovano, I.Tortorelli, D.Ielmini, A.L.Lacaita/titolo:A reliable technique for experimental evaluation of crystallization activation energy in PCMs/doi:/rivista:IEEE electron device letters (Print)/anno:2008/pagina_da:41/pagina_a:43/intervallo_pagine:41–43/volume:20,1

This letter investigates the extraction of activation energy for the crystallization of an amorphous chalcogenide material in phase-change memories. It is demonstrated for the first time that the critical resistance, which is the value of resistance

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d8a061e33a5f1afdca1450c7afab41c
http://www.cnr.it/prodotto/i/25251