Zobrazeno 1 - 10
of 209
pro vyhledávání: '"I. Thurzo"'
Publikováno v:
Synthetic Metals. 156:1108-1117
Steady-state current–voltage ( I – V ) and impedance–voltage ( Z – V ) measurements were performed on in situ (UHV) prepared metal (Ag, Al)/Alq 3 /indium-tin oxide (ITO) devices after exposure to air. When increasing the positive bias on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f2385240209b30f0f89c311a61db754
https://doi.org/10.1016/j.synthmet.2006.07.002
https://doi.org/10.1016/j.synthmet.2006.07.002
Publikováno v:
physica status solidi (a). 203:2326-2340
Two types of Si/SiO2/pentacene organic field-effect transistors (OFET) with bottom Au-source (S) and – drain (D) electrodes were examined by charge transient spectroscopy (QTS), applying pulsed bias ΔUDS to the channel of an OFET with floating gat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d946bc401fbabe68eb28cfe23e0ad746
https://doi.org/10.1002/pssa.200622043
https://doi.org/10.1002/pssa.200622043
Publikováno v:
Applied Surface Science. 252:7631-7635
The Au/Pd/Ti–SiO2–(n)GaAs structures with and without (NH4)2Sx treated gallium arsenide surface, previously analysed by impedance spectroscopy (IS) method, have been investigated using charge transient spectroscopy (QTS) technique. The isothermal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d551d3a9267761b311fd9680866f719b
https://doi.org/10.1016/j.apsusc.2006.03.062
https://doi.org/10.1016/j.apsusc.2006.03.062
Publikováno v:
Journal of Non-Crystalline Solids. 351:2003-2008
The electric properties of a metal/organic/inorganic heterostructure were explored by current–voltage ( I – V ), feedback charge capacitance ( C – V ) and charge transient spectroscopy (QTS). Temperature dependent I – V characteristics from 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f030f326231d02cd1ce1d81eb16c858c
https://doi.org/10.1016/j.jnoncrysol.2005.05.019
https://doi.org/10.1016/j.jnoncrysol.2005.05.019
Publikováno v:
physica status solidi (a). 202:1994-2007
For a large number of organic disordered semiconductors the transport of electrons or holes via hopping is mediated by localized states in the band gap. An attempt is presented towards testing the widely met hopping transport model based on the assum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30695faa24bddfa1c77c28a6e52c6e9f
https://doi.org/10.1002/pssa.200420069
https://doi.org/10.1002/pssa.200420069
Publikováno v:
Semiconductor Science and Technology. 19:1075-1080
Transient charging in response to pulsed bias of copper phthalocyanine (CuPc) organic thin films on indium–tin–oxide (ITO) was investigated by charge transient spectroscopy (QTS) in situ under ultra-high vacuum conditions. The charge relaxation p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f4e25e50ad295496ade0a26be83d2aa
https://doi.org/10.1088/0268-1242/19/9/001
https://doi.org/10.1088/0268-1242/19/9/001
Publikováno v:
Applied Surface Science. 234:149-154
In this work we have investigated the dielectric properties of Ag/PTCDA/Ag structures using impedance spectroscopy (IS). An equivalent circuit is developed for the ac small-signal excitation with frequencies between 100 Hz–5 MHz. It is possible to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f247371d70b9fd98290ede04df2f4540
https://doi.org/10.1016/j.apsusc.2004.05.063
https://doi.org/10.1016/j.apsusc.2004.05.063
Autor:
I. Thurzo, A. Bolognesi, Dietrich R. T. Zahn, A. Di Carlo, Thorsten U. Kampen, T. Ziller, A. Bekkali, Paolo Lugli
Publikováno v:
Applied Surface Science. 234:313-320
The impact of thin organic films on the barrier heights of Ag/n-GaAs(0 0 1) Schottky contacts is investigated using complementary experimental and theoretical techniques, namely current–voltage (I–V) measurements, impedance spectroscopy, and inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf122a2c5d0c531e20e8d60d95243350
https://doi.org/10.1016/j.apsusc.2004.05.258
https://doi.org/10.1016/j.apsusc.2004.05.258
Publikováno v:
Diamond and Related Materials. 13:965-968
Diamond thin films on p-type Si prepared via a bias enhanced chemical vapor deposition technique and equipped with Al Schottky contacts are studied by charge deep-level transient spectroscopy. Three charge relaxation processes can be resolved in Q-DL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ad33f29089cc4cd352252f426eb7df6
https://doi.org/10.1016/j.diamond.2003.10.039
https://doi.org/10.1016/j.diamond.2003.10.039
Publikováno v:
physica status solidi (a). 201:162-170
Steady-state current-voltage (IV) characteristics of metal/organics/metal devices are modelled on the basis of thermionic emission into two back-to-back connected diodes separated by a series bulk resistance. It is shown that the analysis of the IV c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e53c231e92fa5844af94f5ada7d0ad60
https://doi.org/10.1002/pssa.200306735
https://doi.org/10.1002/pssa.200306735