Zobrazeno 1 - 10
of 25
pro vyhledávání: '"I. Tatsuguchi"'
Publikováno v:
MTT-S International Microwave Symposium Digest.
High Q, temperature stable dielectric resonators are excellent stabilizing elements for microwave transistor oscillators. A 4 GHz Ba/sub 2/Ti/sub 9/O/sub 20/ resonator integrated with a Si bipolar transistor in a compact oven has a frequency stabilit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bdda675d5904adab1a37b4faede70fc
https://doi.org/10.1109/mwsym.1977.1124432
https://doi.org/10.1109/mwsym.1977.1124432
Autor:
I. Tatsuguchi, J. W. Gewartowski
Publikováno v:
Bell System Technical Journal. 55:167-182
An experimental 10-W, three-stage, GaAs IMPATT amplifier has been developed with transmission characteristics suitable for use in 6-GHz long-haul radio-relay systems. The amplifier uses five flat-doping-profile GaAs IMPATT diodes in three cascaded, c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::620d1c7e0bf51e842a573c8cb66b9a6a
https://doi.org/10.1002/j.1538-7305.1976.tb02068.x
https://doi.org/10.1002/j.1538-7305.1976.tb02068.x
Publikováno v:
Proceedings of the IEEE. 59:1212-1215
Schottky-barrier GaAs IMPATT diodes have been fabrirated in a double epitaxial layer structure on low-etch-pit density substrates. The resulting low defect density in the active region permits high power outputs and low noise measure. Mounted on copp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::665b39b768d821dfbd0a097dd46b1eed
https://doi.org/10.1109/proc.1971.8366
https://doi.org/10.1109/proc.1971.8366
Autor:
I. Tatsuguchi
Publikováno v:
IEEE Journal of Solid-State Circuits. 5:354-358
A microwave integrated circuit module permitting an arbitrary number of phase-locked IMPATT oscillators to be combined, while providing phase equalization essential for FM operation, will be covered.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f64b8efd27b24ade1e4b21b2bbd3df74
https://doi.org/10.1109/jssc.1970.1050141
https://doi.org/10.1109/jssc.1970.1050141
Autor:
I. Tatsuguchi
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 9:3-6
A hybrid junction has been developed using a symmetrical strip transmission line for application in the UHF range. It has a frequency band of +- 20 per cent where the input voltage standing-wave ratios at all ports are less than 1.26 (2 db), the powe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a79a468f282f38230f47d4fe307b9b4
https://doi.org/10.1109/tmtt.1961.1125255
https://doi.org/10.1109/tmtt.1961.1125255
Autor:
T.M. Hyltin, W.W. Anderson, H.J. Shaw, F.R. Arams, M.E. Hines, W.P. Allis, F. Keywell, R.D. Weglein, J.A. Luksch, B. Lax, D. Pines, G.L. Matthaei, E.W. Matthews, S.T. Eng, K.L. Kotzebue, I. Bady, I. Tatsuguchi, B.J. Elliott, T. Schaug-Pettersen, W.M. Sharpless, G.A. VerWys
Publikováno v:
IRE Transactions on Microwave Theory and Techniques. 9:105-107
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5663488e823a66e41be4106cb6512626
https://doi.org/10.1109/tmtt.1961.1125281
https://doi.org/10.1109/tmtt.1961.1125281
Autor:
E.W. Aslaksen, I. Tatsuguchi
Publikováno v:
1967 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
A 4-GHz balanced Schottky barrier diode mixer-preamp was designed and fabricated on ceramic substrate and epoxy glass board using both thin-film and printed-circuit technologies. The elements were integrally assembled in a common housing resulting in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72e88039cfe05426b094277c0420a730
https://doi.org/10.1109/isscc.1967.1154526
https://doi.org/10.1109/isscc.1967.1154526
Publikováno v:
1971 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
IMPATT diode characterization on the basis of output power and the corresponding FM noise figure over a range of operating conditions is presented. The characterization consists of families of power noise curves obtained for a phase-locked IMPATT osc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cecd979db0aca4f0bf556b10b1799a55
https://doi.org/10.1109/isscc.1971.1154918
https://doi.org/10.1109/isscc.1971.1154918
Autor:
I. Tatsuguchi
Publikováno v:
1970 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa4a759179a849a8e66cfed5c89a42d3
https://doi.org/10.1109/isscc.1970.1154827
https://doi.org/10.1109/isscc.1970.1154827
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