Zobrazeno 1 - 10
of 67
pro vyhledávání: '"I. T. Serenkov"'
Autor:
V. I. Sakharov, I. T. Serenkov
Publikováno v:
Technical Physics. 66:155-160
The possibilities of using medium-energy (hundreds of kiloelectronvolts) ion beams for diagnostics of solids by measuring the spectra of characteristic X-ray radiation are considered. A modification of the method is proposed that consists in using pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b13e28657cffbc021e7937be265a6e0
https://doi.org/10.1134/s1063784221010175
https://doi.org/10.1134/s1063784221010175
Autor:
E. I. Shek, E. V. Fomin, A. E. Kalyadin, K. V. Karabeshkin, A. D. Bondarev, E. V. Sherstnev, V. I. Sakharov, N. A. Sobolev, V. M. Mikoushkin, I. T. Serenkov
Publikováno v:
Semiconductors. 53:415-418
The concentration profiles of defects produced in structures upon the implantation of nitrogen ions into GaAs epitaxial layers with an uncovered surface and that covered with an AlN film and subsequent annealing are studied. The ion energies and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31cce08a6a22b622f87b193b0ea65dbe
https://doi.org/10.1134/s1063782619040250
https://doi.org/10.1134/s1063782619040250
Autor:
V. I. Sakharov, I. T. Serenkov, E. I. Shek, N. A. Sobolev, A. E. Kalyadin, E. O. Parshin, N. S. Melesov, C. G. Simakin
Publikováno v:
Semiconductors. 53:156-159
The influence exerted by the conditions of the post-implantation annealing of silicon implanted with germanium ions on how luminescence centers are formed is studied. Measurements by the technique of the Rutherford backscattering of medium- and high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be282e45d3dd47446132d0b932a5541d
https://doi.org/10.1134/s1063782619020234
https://doi.org/10.1134/s1063782619020234
Autor:
V. I. Sakharov, V. V. Afrosimov, A. A. Odinets, M. V. Zlygostov, I. T. Serenkov, Andrey Tumarkin
Publikováno v:
Physics of the Solid State. 60:2091-2096
The initial stages of growth of barium zirconate titanate and barium stannate titanate ferroelectric films on single-crystal sapphire and silicon carbide are studied for the first time. The choice of substrates is dictated by the possibility of using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb220afdc4486d1261d4b2b1dd178102
https://doi.org/10.1134/s1063783418100293
https://doi.org/10.1134/s1063783418100293
Publikováno v:
Physics of the Solid State. 60:1235-1238
Comparison of the channel spectra of medium energy ion scattering, visualized for LaAlO3/(001)SrTiO3 heterostructures with a thickness of the lanthanum aluminate layer of one to six unit cells, indicates that the lanthanum aluminate layer grows coher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b87432071624b338ff7d0c9fde067a59
https://doi.org/10.1134/s1063783418060082
https://doi.org/10.1134/s1063783418060082
Publikováno v:
Physics of the Solid State. 60:173-177
The medium-energy ion scattering (MEIS) spectroscopy was used to obtain the data on the structure and stoichiometry of interfaces in LaAlO3/SrTiO3 (LAO/STO) heterostructures. The coverage of the LAO/STO heterostructure with a LAO film increased by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1216eca6c5c7af31ed6b3500b7fa7d5
https://doi.org/10.1134/s1063783418010067
https://doi.org/10.1134/s1063783418010067
Autor:
A. E. Kalyadin, N. A. Sobolev, V. I. Sakharov, E. O. Parshin, I. T. Serenkov, O. V. Aleksandrov, N. S. Melesov, E. I. Shek
Publikováno v:
Semiconductors. 53:153-155
The implantation of Czochralski-grown p-type silicon with 1-MeV germanium ions at a dose of 2.5 × 1014 cm–2 does not lead to the amorphization of single-crystal silicon. Under subsequent high-temperature annealing, electrically active acceptor cen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9587861ee1a1ef4e94dd8409987ba9c2
https://doi.org/10.1134/s1063782619020222
https://doi.org/10.1134/s1063782619020222
Autor:
I. T. Serenkov, V. I. Sakharov, S. V. Razumov, A. A. Odinets, E. N. Sapego, V. V. Afrosimov, M. V. Zlygostov, Andrey Tumarkin
Publikováno v:
Physics of the Solid State. 59:2374-2380
The initial stages of the growth of ferroelectric barium strontium titanate films on single-crystal silicon carbide substrates have been studied for the first time. The choice of a substrate with high thermal conductivity has been due to the possibil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa9eacf547ec8a4804efd560452a4a09
https://doi.org/10.1134/s1063783417120307
https://doi.org/10.1134/s1063783417120307
Publikováno v:
Physics of the Solid State. 58:2560-2566
Structure of 40-nm thick La0.67Ca0.33MnO3 (LCMO) films grown by laser evaporation on (001) and (110) LaAlO3 (LAO) substrates has been investigated using the methods of medium-energy ion scattering and X-ray diffraction. The grown manganite layers are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc17c25bae89fba7b80abfd967183e11
https://doi.org/10.1134/s1063783416120039
https://doi.org/10.1134/s1063783416120039
Autor:
B. Ya. Ber, E. V. Sherstnev, Elena I. Shek, D. Yu. Kazantsev, V. M. Mikoushkin, I. T. Serenkov, Nikolai A. Sobolev, V. I. Sakharov, K. V. Karabeshkin, N. M. Shmidt, A. E. Kalyadin
Publikováno v:
Technical Physics Letters. 44:574-576
Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N+ ions at doses of 5 × 1014
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df523ecc713c32e651bcf01783d8b7e9
https://doi.org/10.1134/s1063785018070131
https://doi.org/10.1134/s1063785018070131