Zobrazeno 1 - 10
of 177
pro vyhledávání: '"I. Simkiene"'
Autor:
I. Simkiene, N. L. Dmitruk, Valentinas Snitka, Igor Dmitruk, Natalia Berezovska, Denis O. Naumenko
Publikováno v:
MRS Proceedings. 1534:A99-A104
Properties of the electrochemically prepared porous III-V semiconductors, GaAs and InP, have been studied using scanning electron microscopy (SEM), atomic force microscopy (AFM), monochromatic multi-angle-of-incidence (MAI) ellipsometry, Raman scatte
Autor:
L. Rasteniene, J. Sabataityte, I. Simkiene, D. Kurdyukov, G.-J. Babonas, R. Vaisnoras, V. Golubev, A. Reza
Publikováno v:
Superlattices and Microstructures. 44:664-669
Synthetic opal crystals were infiltrated with concentrated (1–10 mM) aqueous solutions of iron porphyrin (FeTPPS). The assemblies of nanoscale blocks of 25–30 nm, which have been clustered into rod-like structures of size 100–150 nm typical of
Autor:
L. Rasteniene, A. Suchodolskis, J. Sabataityte, A. Reza, I. Simkiene, G.J. Babonas, D. Kurdyukov, M. Baran, R. Szymczak, R. Vaisnoras, V. Golubev
Publikováno v:
Photonics and Nanostructures - Fundamentals and Applications. 5:125-128
Structural, optical and magnetic properties of porphyrin-infiltrated opal hybrid structures were investigated. Bulk samples of synthetic opal were grown by sedimentation technique from colloidal solution of SiO2 spheres of diameter � 250 nm. The st
Publikováno v:
Photonics and Nanostructures - Fundamentals and Applications. 5:129-135
Adsorption of iron porphyrin (Fe III TPPS 4 ) Fe(III) meso -tetra(4-sulfonatophenyl) porphine on aminosilanized surface of crystalline Si (c-Si) was investigated. Formation of nanometric structures of Fe III TPPS 4 on c-Si, the surface of which has b
Publikováno v:
Sensors and Actuators B: Chemical. 126:294-300
Raman scattering (RS), photoluminescence (PL), optical reflectance spectra, AFM, SEM, XPS have been measured to study porous films of GaAs, obtained by electrochemical etching in HF:H2O or HF:C2H5OH:H2O electrolyte. The two-layer structure was found
Publikováno v:
Materials Science and Engineering: C. 26:1007-1011
The system produced by deposition of aqueous solution (10− 3–10− 6 M) of mesotetra(4-sulfonatophenyl)porphine (TPPS4) on Si was studied. The morphology of self-organized structures of TPPS4 was investigated by atomic force microscopy (AFM). The
Autor:
J. Sabataityte, A. Reza, I. Simkiene, G.J. Babonas, U.O. Karlsson, A. Suchodolskis, R. Szymczak, M. Baran
Publikováno v:
Applied Surface Science. 252:5391-5394
Optical properties of Fe-doped silica films on Si were investigated by ellipsometric technique in the region 1-5 eV. Samples were produced by sol-gel method. Precursors were prepared by mixing tetr ...
Autor:
G.-J. Babonas, I. Simkiene, Wolf Assmus, R. Sterzel, V. Karpus, A. Suchodolskis, A. Reza, V. Jasutis
Publikováno v:
Philosophical Magazine Letters. 82:157-165
Faceted etch pits have been observed on chemically etched single-grain icosahedral Zn-Mg-Y quasicrystal samples with C 2, C 3 and C 5 symmetry rotation axes perpendicular to their surfaces. The anisotropic etching was produced by 2.5-5%HCl solution i
Publikováno v:
Applied Physics A. 73:495-501
Laser-induced transient-grating measurements were performed to monitor the influence of porous silicon on the surface recombination of a highly doped n+-silicon emitter of solar cells. With this technique, photocarrier diffusion and recombination wit
Publikováno v:
Semiconductor Science and Technology. 13:517-522
Silicon oxide films phosphorus doped and formed by a spin-on technique are proposed for the manufacture of shallow, heavily doped -p junctions. The structures were investigated using electron microscopy, optical and electrical methods. Transient micr