Zobrazeno 1 - 10
of 870
pro vyhledávání: '"I. S. T. Tsong"'
Publikováno v:
Surface Review and Letters. :565-570
The growth of GaN buffer layers of thickness 10–25 nm directly on 6H–SiC (0001) substrates was studied using low energy electron microscopy, atomic force microscopy and cross-sectional transmission electron microscopy. The Ga flux was supplied by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fbb1dc1b64fb9de134597e5ef5dcff4
https://doi.org/10.1142/s0218625x00000701
https://doi.org/10.1142/s0218625x00000701
Autor:
Toshio Sakurai, Takahisa Ohno, Q. K. Xue, R. Z. Bakhtizin, Yukio Hasegawa, I. S. T. Tsong, Qi-Kun Xue
Publikováno v:
Physical Review B. 59:12604-12611
A number of superstructures of the GaN (0001) surface have been investigated systematically by reflection high-energy electron diffraction, scanning tunneling microscopy, and first-principles theoretical calculations. The GaN-thin films are grown on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a39b5d0e2657bb14452db5116bdb6618
https://doi.org/10.1103/physrevb.59.12604
https://doi.org/10.1103/physrevb.59.12604
Publikováno v:
Physical Review Letters. 78:2608-2611
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e29143c997f5f984f5053f78d565e50
https://doi.org/10.1103/physrevlett.78.2608
https://doi.org/10.1103/physrevlett.78.2608
Autor:
J. Tolle, R. Roucka, I. S. T. Tsong, C. Ritter, P. A. Crozier, A. V. G. Chizmeshya, J. Kouvetakis
Publikováno v:
Applied Physics Letters. 82:2398-2400
A semiconductor structure and fabrication method is provided for integrating wide bandgap nitrides with silicon. The structure includes a substrate, a single crystal buffer layer formed by epitaxy over the substrate and a group III nitride film forme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::00f9a399ba0b6e50256fdb04de0277b3
https://doi.org/10.1063/1.1566099
https://doi.org/10.1063/1.1566099
Publikováno v:
Physical Review B. 50:1567-1574
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e46be0e69641dbf10b1768da2bd7813a
https://doi.org/10.1103/physrevb.50.1567
https://doi.org/10.1103/physrevb.50.1567
Publikováno v:
Physical Review B. 72
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f33e918d04ed087b54e2c40f4b939570
https://doi.org/10.1103/physrevb.72.245424
https://doi.org/10.1103/physrevb.72.245424
Autor:
Yukiko, Yamada-Takamura, Z T, Wang, Y, Fujikawa, T, Sakurai, Q K, Xue, J, Tolle, P-L, Liu, A V G, Chizmeshya, J, Kouvetakis, I S T, Tsong
Publikováno v:
Physical review letters. 95(26)
Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d866a3c9cb74972df2735ead8b1b2394
https://pubmed.ncbi.nlm.nih.gov/16486376
https://pubmed.ncbi.nlm.nih.gov/16486376
Autor:
Eva Coufalova, Vladimir Kolarik, William P. Sharp, Robert W. Roberson, I. S. T. Tsong, Armin Delong
Publikováno v:
Microscopy and Microanalysis. 6:1136-1137
Biological transmission electron microscopy (TEM) has evolved over the past 50 to 60 years in concert with the instrumentation available. As beam acceleration energies have increased to 100-200 keV, specimen preparation protocols have been modified a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfd5367eb9c88d35f81db25afc51ffc8
https://doi.org/10.1017/s1431927600038174
https://doi.org/10.1017/s1431927600038174
Autor:
Nayak, Sanjay, Shanmugham, Sathish Kumar, Petrov, Ivan, Rosen, Johanna, Eklund, Per, Birch, Jens, le Febvrier, Arnaud
Publikováno v:
Journal of Applied Physics; 10/7/2023, Vol. 134 Issue 13, p1-9, 9p
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:681
Scanning tunneling microscopy is used to study β‐SiC (001) and (111) surfaces. The (001) surfaces of β‐SiC were grown on Si(001) substrates while the (111) surfaces were grown on α‐SiC{0001} substrates, both by chemical vapor deposition. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::19779e07cc2a888c4e41452aebd11c4b
https://doi.org/10.1116/1.585531
https://doi.org/10.1116/1.585531