Zobrazeno 1 - 10 of 63 pro vyhledávání: '"I. S. Mukhin"'
1
Akademický článek
Measurement of local optomechanical properties of a direct bandgap 2D semiconductor
Autor: F. A. Benimetskiy, V. A. Sharov, P. A. Alekseev, V. Kravtsov, K. B. Agapev, I. S. Sinev, I. S. Mukhin, A. Catanzaro, R. G. Polozkov, E. M. Alexeev, A. I. Tartakovskii, A. K. Samusev, M. S. Skolnick, D. N. Krizhanovskii, I. A. Shelykh, I. V. Iorsh
Publikováno v: APL Materials, Vol 7, Iss 10, Pp 101126-101126-5 (2019)
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMDs)—direct bandgap semiconductors with strong excitonic response. Deformation of TMD monolayers allows ind
Externí odkaz: https://doaj.org/article/5e5cb24eadde452fa77e958c8f022b12
Zobrazit plný text záznamu
3
Resonant Hybrid Metal–Dielectric Nanostructures for Local Color Generation
Autor: E. I. Ageev, V. A. Iudin, Y. Sun, E. A. Petrova, P. N. Kustov, V. V. Yaroshenko, J. V. Mikhailova, A. S. Gudovskikh, I. S. Mukhin, D. A. Zuev
Publikováno v: JETP Letters. 115:186-189
Here, we experimentally and theoretically demonstrate a laser-induced change in local color based on the reshaping of gold–silicon asymmetric nanostructures. The evolution of scattering properties enabled by laser reshaping shows the potential of h
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a7981aad3bc2dbe477b9f96a96218388
https://doi.org/10.1134/s0021364022040014
Zobrazit plný text záznamu
5
Extremely high frequency Schottky diodes based on single GaN nanowires
Autor: K Yu Shugurov, A M Mozharov, V V Fedorov, S A Blokhin, V V Neplokh, I S Mukhin
Publikováno v: Nanotechnology. 34:245204
Gallium nitride (GaN) is one of the most promising materials for high-frequency devices owing to its prominent material properties. We report on the fabrication and study of a series of Schottky diodes in the ground-signal-ground topology based on in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6fa1ccbf7ec36d3054f9cf4a1504bfab
https://doi.org/10.1088/1361-6528/acc4cb
Zobrazit plný text záznamu
6
Strong coupling of excitons in 2D MoSe2/hBN heterostructure with optical bound states in the continuum
Autor: Ivan S. Sinev, M. S. Skolnick, Anton Samusev, I. S. Mukhin, Vasily Kravtsov, I. V. Iorsh, E. Khestanova, F. A. Benimetskiy, D. N. Krizhanovskii, I. A. Shelykh
Publisher's version (útgefin grein)
We experimentally demonstrate strong exciton-photon coupling in a MoSe2/hBN heterostructure interfaced with an all-dielectric metasurface supporting high-Q bound states in the continuum. The resulting exciton
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87fac58d80e88deed56e7544002fcad1
https://hdl.handle.net/20.500.11815/2374
Zobrazit plný text záznamu
7
Selective epitaxy of InP/GaInP quantum dots using SiO2 mask
Autor: A. M. Mintairov, A. S. Vlasov, A. V. Ankudinov, N. A. Kalyuzhnyy, D. V. Lebedev, I. S Mukhin, S. A. Mintairov, R. A. Salii, A. M. Mozharov
Publikováno v: INTERNATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF COMBUSTION AND PROCESSES IN EXTREME ENVIRONMENTS (COMPHYSCHEM’20-21) and VI INTERNATIONAL SUMMER SCHOOL “MODERN QUANTUM CHEMISTRY METHODS IN APPLICATIONS”.
Site-controlled growth of InP/GaInP2 quantum dots has been demonstrated by means of selective epitaxy technique realized with a SiO2 mask and e-beam lithography. Critical influence of the growth temperature on QD formation in the selective epitaxy ha
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b0d8b2c691f88feb726aa028b99242d3
https://doi.org/10.1063/5.0031895
Zobrazit plný text záznamu
8
Study of nonlinear optical phenomena in silicon nanowires
Autor: V A Mastalieva, V Neplokh, A I Morozov, A A Nikolaeva, A S Gudovskikh, I S Mukhin, S V Makarov
Publikováno v: Journal of Physics: Conference Series. 2086:012023
This work studies generation of second and third harmonics in arrays of vertically oriented silicon nanowires (SiNWs) encapsulated into a silicone membrane and separated from the growth substrate. The structures were produced by plasma-chemical etchi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2ce3c0efd427924871a3fb630d69851e
https://doi.org/10.1088/1742-6596/2086/1/012023
Zobrazit plný text záznamu
9
Numerical modelling of non-planar GaN LED with CNT top contact
Autor: S A Raudik, D M Mitin, A A Vorobyev, A M Mozharov, A G Nasibulin, I S Mukhin
Publikováno v: Journal of Physics: Conference Series. 2086:012095
In this paper, the theoretical study of LED based on GaN NWs with carbon nanotubes (CNT) top contact has been presented. The main electrical and optical characteristics of LED have been numerically calculated. In a 0.5 x 0.5 mm NWs array, the Ohmic l
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::dfdc65c078d3533389dc36cf62d554d5
https://doi.org/10.1088/1742-6596/2086/1/012095
Zobrazit plný text záznamu
10
Processing and characterization of GaP nanowires encapsulated into a PDMS large-scale membrane for flexible optoelectronics
Autor: S M Mukhangali, V Neplokh, F M Kochetkov, V V Fedorov, A G Nasibulin, S V Makarov, R M Islamova, I S Mukhin
Publikováno v: Journal of Physics: Conference Series. 2086:012093
This paper presents the methods of fabricating arrays of semiconductor III-V nanowires transferred into a flexible polydimethylsiloxane membrane. Molecular beam epitaxy was used to synthesize GaP nanowires. The synthesized nanowire arrays were encaps
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::92715c0e2414d8a215dabf112ded1fc2
https://doi.org/10.1088/1742-6596/2086/1/012093
Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání

Omezení vyhledávání
Plný text Recenzováno Digitální knihovna AV ČR
Zdroje