Zobrazeno 1 - 10
of 19
pro vyhledávání: '"I. S. Millard"'
Autor:
Franco Cacialli, J. H. Burroughes, Thomas M. Brown, I. S. Millard, D. J. Lacey, T. Butler, Richard H. Friend
Publikováno v:
Journal of Applied Physics. 93:6159-6172
The electronic nature of metal-semiconductor contacts is a fundamental issue in the understanding of semiconductor device physics, because such contacts control charge injection, and therefore play a major role in determining the electron/hole popula
Autor:
I. S. Millard
Publikováno v:
Synthetic Metals. :119-123
We report recent results on a range of poly(fluorene)-based polymer light emitting diodes (PLEDs). These have been developed for a wide range of emission colours with a common device architecture. This approach achieves facile injection of both elect
Autor:
Alex R. Hamilton, Clare Foden, N. K. Patel, Michelle Y. Simmons, David A. Ritchie, G. A. C. Jones, I. S. Millard, Michael Pepper
Publikováno v:
Journal of Physics: Condensed Matter. 11:3711-3728
In this paper, we discuss the effect of a strong perpendicular magnetic field component upon a range of coupled double quantum well (CDQW) devices. With increasing inter-layer tunnelling, we observe a transition from double- to single-layer character
Autor:
I. S. Millard, Clare Foden, N. K. Patel, Michael Pepper, G. A. C. Jones, David A. Ritchie, Michelle Y. Simmons
Publikováno v:
Physical Review B. 55:R13401-R13404
A high mobility coupled double-quantum-well structure is used to study distortions in the Fermi surfaces as a function of in-plane field and perpendicular field. The longitudinal resistance is measured with a fixed perpendicular field component while
Autor:
Michelle Y. Simmons, N. K. Patel, David A. Ritchie, Edmund H. Linfield, Clare Foden, I. S. Millard, Michael Pepper
Publikováno v:
Physical Review B. 55:6715-6718
Double quantum-well structures have been used to measure the inverse compressibility (${\mathrm{\ensuremath{\kappa}}}^{\mathrm{\ensuremath{-}}1}$) of a two-dimensional electron gas as a function of the confining quantum-well width. The lower layer is
Autor:
Michael Pepper, David A. Ritchie, N. K. Patel, G. A. C. Jones, Edmund H. Linfield, I. S. Millard, Clare Foden
Publikováno v:
Journal of Physics: Condensed Matter. 9:1079-1094
The anticrossing of the dispersion relations of two two-dimensional electron gases (2DEGs) in an in-plane magnetic field results in distorted Fermi surfaces, leading to density of states and effective mass changes. We have used two different techniqu
Autor:
Michael Pepper, M. P. Grimshaw, N. K. Patel, David A. Ritchie, P. D. Rose, G. A. C. Jones, Edmund H. Linfield, I. S. Millard
Publikováno v:
Physical Review B. 53:15443-15446
There have been predictions that for closely spaced two-dimensional electron gases (2DEG's), charge transfer between the 2DEG's can arise from electron interactions due to exchange and correlation [Ruden and Wu, Appl. Phys. Lett. 59, 2165 (1991)]. In
Autor:
David A. Ritchie, Michelle Y. Simmons, Alex R. Hamilton, I. S. Millard, Michael Pepper, N. K. Patel
Publikováno v:
Journal of Physics: Condensed Matter. 8:L311-L318
We have used gated double two-dimensional electron gas (2DEG) samples in a study of the integer quantum Hall effect at mismatched carrier densities. For weakly coupled samples, the Landau level occupancy associated with the upper and lower 2DEGs may
Autor:
Michael Pepper, G. A. C. Jones, P. D. Rose, Edmund H. Linfield, I. S. Millard, N. K. Patel, Michelle Y. Simmons, David A. Ritchie
Publikováno v:
Semiconductor Science and Technology. 11:483-488
Four-terminal resistance measurements of two-dimensional electron gases (2DEGs) connected in parallel in GaAs/AlGaAs quantum well (QW) structures have been performed. These measurements show regions of positive and negative transconductance, resultin
Autor:
G. A. C. Jones, N. K. Patel, Michael Pepper, Edmund H. Linfield, I. S. Millard, P. D. Rose, David A. Ritchie
Publikováno v:
Journal of Physics: Condensed Matter. 7:L585-L591
Independent contacts have been produced to all three two-dimensional electron gases (2DEGs) in a triple-quantum-well structure. This has been achieved by using in situ focused ion beam implantation followed by molecular beam epitaxial regrowth. Later