Zobrazeno 1 - 3
of 3
pro vyhledávání: '"I. S., Sinev"'
Autor:
F. A. Benimetskiy, V. A. Sharov, P. A. Alekseev, V. Kravtsov, K. B. Agapev, I. S. Sinev, I. S. Mukhin, A. Catanzaro, R. G. Polozkov, E. M. Alexeev, A. I. Tartakovskii, A. K. Samusev, M. S. Skolnick, D. N. Krizhanovskii, I. A. Shelykh, I. V. Iorsh
Publikováno v:
APL Materials, Vol 7, Iss 10, Pp 101126-101126-5 (2019)
Strain engineering is a powerful tool for tuning physical properties of 2D materials, including monolayer transition metal dichalcogenides (TMDs)—direct bandgap semiconductors with strong excitonic response. Deformation of TMD monolayers allows ind
Externí odkaz:
https://doaj.org/article/5e5cb24eadde452fa77e958c8f022b12
Autor:
P. A., Dmitriev, D. G., Baranov, V. A., Milichko, I. S., Mukhin, Q., Li, S., Mondal, S. V., Makarov, A. K., Samusev, G. P., Zograf, D. A., Zuev, E. K., Makarova, M. I., Petrov, I. S., Sinev, M. A., Gorlach, K. S., Frizyuk, P. A., Belov
Publikováno v:
AIP Conference Proceedings; 2017, Vol. 1874 Issue 1, p1-3, 3p, 1 Graph
Autor:
F. A. Benimetskiy, V. Kravtsov, E. Khestanova, I. S. Mukhin, I. S. Sinev, A. K. Samusev, I. A. Shelykh, D. N. Krizhanovskii, M. S. Skolnick, I. V. Iorsh
Publikováno v:
Journal of Physics: Conference Series; 2020, Vol. 1461 Issue 1, p1-1, 1p