Zobrazeno 1 - 10
of 37
pro vyhledávání: '"I. Rarenko"'
Autor:
V. M. Sklyarchuk, Z. I. Zakharuk, M. H. Kolisnyk, A. I. Rarenko, O. F. Sklyarchuk, P. M. Fochuk
Publikováno v:
Фізика і хімія твердого тіла, Vol 20, Iss 3, Pp 257-263 (2019)
The electrical characteristics of In-doped Cd0.9Zn0.1Te (CZT:In) crystals with concentration of Со=3,5*1017 cm-3, which are used in X- and gamma-radiation detectors, were investigated during their growth. CZT:In crystals possess a weakly pronounced
Externí odkaz:
https://doaj.org/article/ac77d876125d4229b94efedfe979f782
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 3, Pp 239-245 (2018)
Based on X-ray studies, conditions for growth of high structural perfect Cd1-хZnxTe (0,02≤х≤0,1) crystalshave been optimized. In crystals obtained, changes in the structure, electrical parameters and optical transmissionat samples irradiation b
Externí odkaz:
https://doaj.org/article/bb72ccda3cc04fd1967d2270739902eb
Autor:
S. Solodin, O. F. Sklyarchuk, A. I. Rarenko, P. M. Fochuk, Ralph B. James, Aleksey E. Bolotnikov, Valery M. Sklyarchuk, Z. I. Zakharuk
Publikováno v:
IEEE Transactions on Nuclear Science. 67:2439-2444
The electrical and spectrometric characteristics of the Cr/cadmium telluride (CdTe)/Pt structure with a metal–semiconductor type rectifying contact, used in X/ $\gamma $ -ray detectors, are investigated. For the detectors fabrication, chlorine-dope
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f64fbb0b80fbae9855e4c4f9b234230c
https://doi.org/10.1109/tns.2020.3026259
https://doi.org/10.1109/tns.2020.3026259
Publikováno v:
Фізика і хімія твердого тіла, Vol 19, Iss 3, Pp 239-245 (2018)
Based on X-ray studies, conditions for growth of high structural perfect Cd1-хZnxTe (0,02≤х≤0,1) crystalshave been optimized. In crystals obtained, changes in the structure, electrical parameters and optical transmissionat samples irradiation b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c6a0dcdf329d0701a55039a8c0f59e73
https://doi.org/10.15330/pcss.19.3.239-245
https://doi.org/10.15330/pcss.19.3.239-245
Autor:
Aleksey E. Bolotnikov, Ralph B. James, P. M. Fochuk, Serhii Solodin, Valerii M. Sklyarchuk, A. I. Rarenko, Z. I. Zakharuk
Publikováno v:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XXI.
The study of the electro-physical properties of n-type semi-insulating crystals of indium-doped Cd(Mn)Te solid solution with a resistivity ~ (4÷5)×1010 Ohm×cm at T = 300 K was carried out. The structures both with an ohmic (In/Cd(Mn)Te/In) contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f42115013a8b8b9393fe0c1d2fcc63d
https://doi.org/10.1117/12.2530444
https://doi.org/10.1117/12.2530444
Autor:
A. I. Rarenko, Aleksey E. Bolotnikov, Ge Yang, Ye. Nykonyuk, M. Kolesnik, Ralph B. James, Z. I. Zakharuk, P. M. Fochuk
Publikováno v:
IEEE Transactions on Nuclear Science. 63:1839-1843
CdTe crystals are used widely for manufacturing gamma-ray radiation sensors, and we can improve their properties if we eliminate as many as possible of their Te inclusions. In this paper, we describe our two modes of removing them; first, we used the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae7d2b17739ae7992d722cdf54194301
https://doi.org/10.1109/tns.2016.2548425
https://doi.org/10.1109/tns.2016.2548425
Autor:
Valeriy M. Sklyarchuk, P. M. Fochuk, V. P. Kladko, A. Medvid, Yevgeniy Nikonyuk, Ilariy Rarenko, Volodymyr Koshkin, Sergiy Budzulyak, A. I. Rarenko, Edvins Dauksta, Z. I. Zakharuk, Nadiya Vakhnyak, D. V. Korbutyak, L. A. Kosyachenko, Lubomyr Demchyna, Boris Danilchenko, Sergey Dremlyuzhenko
Publikováno v:
Advanced Materials Research. 1117:107-113
Semiconductor Hg3In2Te6 crystals and their analogous are solid solutions of In2Te3 and HgTe. Hg3In2Te6 crystals are congruently melted as chemical compound. Like In2Te3 the Hg3In2Te6 crystal has cubic crystal lattice with stoichiometric vacancies in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2393ac894fd325c43731260a89f6309
https://doi.org/10.4028/www.scientific.net/amr.1117.107
https://doi.org/10.4028/www.scientific.net/amr.1117.107
Autor:
M. I. Kuchma, I. M. Yuriychuk, E. S. Nikonyuk, V. L. Shlyakhovyĭ, Z. I. Zakharuk, A. I. Rarenko
Publikováno v:
Semiconductors. 42:1012-1015
The results of studying the temperature dependences of resistivity and the Hall coefficient in crystals of Cd1 − x Mn x Te alloys (0.02 0.06. An anomalous isothermal variation in the hole concentration by an amount from half to three orders of magn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::16bed8655f3ac329f1d939b27acb6454
https://doi.org/10.1134/s1063782608090029
https://doi.org/10.1134/s1063782608090029
Autor:
A. I. Rarenko, P. M. Fochuk, M. Kuchma, Vya. Shlyakhoviy, Z. I. Zakharuk, Ye. Rybak, Ye. Nikonyuk
Publikováno v:
physica status solidi c. 3:750-753
A model of Ge incorporation into CdTe lattice based on the analysis of temperature influence of post-growth crystal annealing on CdTe:Ge electric properties is proposed. Ge impurity is mainly placed in Te sublattice in crystals fast cooled from high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177a741f3e261619391d521e6b2d923c
https://doi.org/10.1002/pssc.200564666
https://doi.org/10.1002/pssc.200564666
Publikováno v:
physica status solidi c. 3:742-745
The present paper deals with the technology of CdTe, Cd1–yMnyTe substrates and CdxHg1–xTe, CdxMnyHg1–x–yTe graded band-gap structures (GBS). Investigation results of structural quality, IR-radiation transmission and optical density of the GBS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c835526bbe74bab7d1369264d2a34670
https://doi.org/10.1002/pssc.200564662
https://doi.org/10.1002/pssc.200564662