Zobrazeno 1 - 10
of 31
pro vyhledávání: '"I. Rajta"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 761-768 (2022)
High-energy low-mass proton implantation achieved considerable interest in semiconductor technology, due to much deeper penetration of hydrogen ions into silicon as compared to common dopants, boron, phosphorous, and arsenic. Accordingly, monitoring
Externí odkaz:
https://doaj.org/article/6d3f508396884b1bb121f734104a64c1
Autor:
A. J. Krasznahorkay, A. Krasznahorkay, M. Begala, M. Csatlós, L. Csige, J. Gulyás, A. Krakó, J. Timár, I. Rajta, I. Vajda, N. J. Sas
Publikováno v:
Physical Review C. 106
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30d59804c3098ad7e80dda36f70bf08f
https://doi.org/10.1103/physrevc.106.l061601
https://doi.org/10.1103/physrevc.106.l061601
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 478:194-200
In this work resonance parameters of the 28Si(p,p′γ)28Si (Eγ = 1779 keV) and 14N(p,p′γ)14N (Eγ = 2313 keV) reactions were measured between 3 and 4 MeV proton energies for absolute proton beam energy calibration of particle accelerators. For t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ab75d7ff703029e2a8ec403dbcf3605
https://doi.org/10.1016/j.nimb.2020.06.040
https://doi.org/10.1016/j.nimb.2020.06.040
Autor:
D. V. Mifsud, Z. Kaňuchová, P. Herczku, Z. Juhász, S. T. S. Kovács, G. Lakatos, K. K. Rahul, R. Rácz, B. Sulik, S. Biri, I. Rajta, I. Vajda, S. Ioppolo, R. W. McCullough, N. J. Mason
The ubiquity of sulfur ions within the Jovian magnetosphere has led to suggestions that the implantation of these ions into the surface of Europa may lead to the formation of SO2. However, previous studies on the implantation of sulfur ions into H2O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::946d6a7417c7f482089e14baef5ddb00
Autor:
A.J. Krasznahorkay, M. Begala, M. Csatlós, L. Csige, J. Gulyás, A. Krakó, A. Krasznahorkay, B.M. Nyakó, I. Rajta, N.J. Sas, J. Timár, I. Vajda
Publikováno v:
Journal of Physics: Conference Series. 2391:012007
A few years ago we observed anomalous electron-positron angular correlations for the 18.15 MeV M1 transition of8Be. This was interpreted as the creation and decay of an intermediate bosonic particle with a mass ofm0c2=16.70±0.35(stat )±0.5(sys) MeV
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65d6f29ddb0741a1b796763e7e7d876e
https://doi.org/10.1088/1742-6596/2391/1/012007
https://doi.org/10.1088/1742-6596/2391/1/012007
Autor:
A. Krasznahorkay, B. M. Nyakó, J. Gulyás, M. Csatlós, N. J. Sas, L. Csige, I. Rajta, János Timár, I. Vajda
Publikováno v:
Physical Review C. 104
Angular correlation spectra of ${e}^{+}{e}^{\ensuremath{-}}$ pairs produced in the $^{3}\mathrm{H}(p,{e}^{+}{e}^{\ensuremath{-}})^{4}\mathrm{He}$ nuclear reaction have been studied at ${E}_{p}=510$, 610, and 900 keV proton energies. The main features
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b263d56a65b4c12cb6c546c5e5b14c8
https://doi.org/10.1103/physrevc.104.044003
https://doi.org/10.1103/physrevc.104.044003
Dose monitoring in MeV energy hydrogen implanted silicon by photo-modulated reflectance measurements
Publikováno v:
2021 20th International Workshop on Junction Technology (IWJT).
Proton implantation into silicon is utilized for several purposes in semiconductor industry. Low dose implantations can be applied in power electronic devices to fine tune the minority charge carrier lifetime [1] , while medium dose proton implants g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0146e6d4f13a3ec0da975cc3ed16d7b5
https://doi.org/10.23919/iwjt52818.2021.9609394
https://doi.org/10.23919/iwjt52818.2021.9609394
We present computer simulations about the spatial and temporal evolution of a 1-MeV proton microbeam transmitted through an insulating macrocapillary with the length of 45 mm and with the inner diameter of 800 \ensuremath{\mu}m. The axis of the capil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90a8baee86e1addc4494ff35b746e45e
Autor:
Z. Perduk, F. Kocsis, I. K. Vajda, P. Hajdu, R. Rácz, I. Rajta, Sandor Biri, Attila Csik, Z. Kormány
Publikováno v:
The European Physical Journal Plus
In this paper, the Atomki Accelerator Centre (AAC, Debrecen, Hungary) incorporating several small-sized particle accelerators is reviewed. The energy range of our accelerators for proton beam is between 50 eV and 20 MeV. The technical and personnel o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffe39afbb06c3ef25b2109757c9afa51
Autor:
Emil Agocs, Vladimír Havránek, G.U.L. Nagy, István Bányász, Vaclav Vosecek, I. Rajta, Roman Holomb, Peter Petrik, Benjamin Kalas, Miklós Veres, Miklos Fried
Publikováno v:
PROCEEDINGS OF THE INTERNATIONAL CONFERENCE OF COMPUTATIONAL METHODS IN SCIENCES AND ENGINEERING 2019 (ICCMSE-2019).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bccb0d652b21d1165e5f120fd10ebd9
https://doi.org/10.1063/1.5137931
https://doi.org/10.1063/1.5137931